TZA3044BT PHILIPS [NXP Semiconductors], TZA3044BT Datasheet - Page 21
TZA3044BT
Manufacturer Part Number
TZA3044BT
Description
SDH/SONET STM4/OC12 and 1.25 Gbits/s Gigabit Ethernet postamplifiers
Manufacturer
PHILIPS [NXP Semiconductors]
Datasheet
1.TZA3044BT.pdf
(28 pages)
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Philips Semiconductors
Physical characteristics of bare die
1999 Nov 03
handbook, full pagewidth
Glass passivation
Bonding pad dimension
Metallization
Thickness
Size
Backing
Attache temperature
Attache time
SDH/SONET STM4/OC12 and
1.25 Gbits/s Gigabit Ethernet postamplifiers
(1) Typical value.
PARAMETER
1.55
mm
Fig.27 Bonding pad locations of TZA3044U and TZA3044BU.
2.1 m PSG (PhosphoSilicate Glass) on top of 0.65 m oxynitride
minimum dimension of exposed metallization is 90
1.22 m W/AlCu/TiW
380 m nominal
1.55
silicon; electrically connected to GND potential through substrate contacts
<440 C; recommended die attache is glue
<15 s
(1)
AGND
AGND
AGND
V CCA
DINQ
TEST
DIN
n.c.
1.55 mm (2.4 mm
10
11
4
5
6
7
8
9
12
3
13
2
2
14
1
)
x
TZA3044BU
TZA3044U
1.55
21
15
32
0
y
0
(1)
16
31
mm
17
30
VALUE
18
29
28
19
MGR242
27
26
25
24
23
22
21
20
90 m (pad size = 100
TZA3044; TZA3044B
V CCD
TEST
DGND
DOUT
DOUTQ
DGND
TEST
DGND
Product specification
100 m)
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