TPS816F TOSHIBA [Toshiba Semiconductor], TPS816F Datasheet - Page 2
TPS816F
Manufacturer Part Number
TPS816F
Description
LEAD FREE PRODUCT PHOTO-ELECTRIC SWITCHES
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.TPS816F.pdf
(6 pages)
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Part Number
Manufacturer
Quantity
Price
Maximum Ratings
Electrical and Optical Characteristics
Supply voltage
Output voltage
Output current (Ta = Topr)
LED output voltage
LED pulse forward current (Ta = Topr)
Operating temperature
Storage temperature
Soldering temperature (5s)
Note 1: Solder under the lead stopper.
Supply voltage
Supply current
Output
LED output
Peak sensitivity wavelength
Propagation
characteristics
Permissible luminosity
Note 2: The signal light source is an infrared LED with λp = 940 mm.
Note 3: The LED output waveform measurement circuit and waveform are as follows:
Characteristics
TPS816(F)
Characteristics
High-level output
voltage
Low-level output
voltage
Low-level output
voltage
Pulse cycle
Pulse width
Duty ratio
H → L threshold
radiant incidence
L → H threshold
radiant incidence
Hysteresis
Propagation delay
time (L → H)
Propagation delay
time (H → L)
LED
(Ta = 25°C)
V
OUT
GND
OUT
CC
(Note 1)
4
1
3
2
Symbol
V
V
I
I
V
T
T
T
OUT
LED
OUT
LED
CC
opr
stg
sol
E
Symbol
T
LH
V
V
V
t
t
V
W
E
E
I
T
T
pLH
pHL
E
CC
LED
λ
OH
+5 V
V
CC
OL
HL
LH
W
/E
C
/T
p
X
LED
C
HL
(V
−40~100
V
E = 0
I
I
No visible light
E = 2 µW/nm
−30~85
OL
LED
Rating
< = V
< = V
OUT
CC
260
16
70
2
= 16 mA, E = 2 µW/nm
7
CC
CC
V
GND
= 70 mA (peak)
, V
LED
= 5 V, Ta = 25°C)
LED
Test Condition
left open
2
Unit
⎯
⎯
⎯
⎯
T
mA
mA
°C
°C
°C
V
V
V
W
T
(Note 2, 5)
C
(Note 2)
2
(Note 3)
(Note 3)
(Note 2)
(Note 4)
+5 V
3000
1.05
0.45
Min
4.5
4.9
64
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
4
Typ.
0.15
1.35
0.65
130
900
400
400
0.6
0.4
⎯
5
4
5
8
6
TPS816(F)
2004-01-27
Max
1.65
13.7
220
670
670
5.5
0.4
1.0
0.8
0.8
10
⎯
⎯
⎯
7
mm
Unit
µW/
mA
nm
µs
µs
⎯
µs
%
V
V
V
V
lx
2