STR752FR1H7 STMICROELECTRONICS [STMicroelectronics], STR752FR1H7 Datasheet - Page 34

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STR752FR1H7

Manufacturer Part Number
STR752FR1H7
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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Electrical parameters
5.3
5.3.1
34/84
Operating conditions
General operating conditions
Subject to general operating conditions for V
Table 10.
1. If T
2. In low power dissipation state, T
Symbol
V
f
f
HCLK
PCLK
DD_IO
Thermal characteristics on page
Section 6.2: Thermal characteristics on page
V
P
T
T
18
A
D
J
A
is lower, higher PD values are allowed as long as T
Internal AHB Clock frequency
Internal APB Clock frequency
Standard Operating Voltage
Power Scheme 1 & 2
Standard Operating Voltage
Power Scheme 3 & 4
Standard Operating Voltage
Power Scheme 2 & 4
Power dissipation at T
for suffix 6 or T
suffix 7
Ambient temperature for 6 suffix
version
Ambient temperature for 7 suffix
version
Junction temperature range
General operating conditions
(1)
Parameter
A
= 105° C for
A
79).
can be extended to this range as long as T
A
= 85° C
79).
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
Accessing SRAM with 0 wait
states
Accessing Flash in burst
mode, T
Accessing Flash in burst
mode
T
Accessing Flash with 0 wait
states
Accessing Flash in RWW
mode
LQFP100
LQFP64
LFBGA100
LFBGA64
Maximum power dissipation
Low power dissipation
Maximum power dissipation
Low power dissipation
6 Suffix Version
7 Suffix Version
A
>85° C
DD_IO
A
J
Conditions
≤85° C
does not exceed T
, and T
A
unless otherwise specified.
(2)
(2)
J
Jmax
does not exceed T
(see
1.65
Min
-40
-40
-40
-40
-40
-40
3.0
4.5
0
0
0
0
0
Section 6.2:
Max
1.95
434
444
487
344
105
105
125
105
125
3.6
5.5
64
60
56
32
16
32
85
Jmax
(see
MHz
MHz
Unit
mW
°C
°C
°C
°C
°C
°C
V

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