STR752FR1H7 STMICROELECTRONICS [STMicroelectronics], STR752FR1H7 Datasheet - Page 50

• Manufacturer Part Number: STR752FR1H7
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical parameters
5.3.6
50/84
Memory characteristics
Flash memory
Subject to general operating conditions for V
otherwise specified.
Table 26.
1. Data based on characterisation not tested in production
2. 10K program/erase cycles.
Table 27.
1. Data based on characterisation not tested in production.
N
N
Symbol
Symbol
END_B0
END_B1
Y
t
t
t
t
t
t
t
t
PDW
t
t
t
t
RPD
ESR
PB0
PB1
PSL
ESL
PW
RET
ES
ES
ES
ES
Word Program
Double Word Program
Bank 0 Program (256K)
Bank 1 Program (16K)
Sector Erase (64K)
Sector Erase (8K)
Bank 0 Erase (256K)
Bank 1 Erase (16K)
Recovery when disabled
Program Suspend Latency
Erase Suspend Latency
Endurance (Bank 0 sectors)
Endurance (Bank 1 sectors)
Data Retention
Erase Suspend Rate
Flash memory characteristics
Flash memory endurance and data retention
Parameter
Parameter
T
Min time from Erase
Resume to next Erase
Suspend
Single Word programming of
a checker-board pattern
Single Word programming of
a checker-board pattern
Not preprogrammed (all 1)
Preprogrammed (all 0)
Not preprogrammed (all 1)
Preprogrammed (all 0)
Not preprogrammed (all 1)
Preprogrammed (all 0)
Not preprogrammed (all 1)
Preprogrammed (all 0)
A
=85° C
STR750Fxx STR751Fxx STR752Fxx STR755Fxx
Conditions
Test Conditions
DD_IO
and V
18
, T
Min
A
100
10
20
20
= -40 to 105 °C unless
(1)
1.176
Typ
1.54
125
392
343
Value
8.0
6.6
0.9
0.8
35
60
2
Typ
Value
Max
2.94
2.38
224
560
532
4.9
13.7
11.2
300
1.5
1.3
Max
20
10
(2)
(2)
(2)
(2)
(1)
(2)
(2)
kcycles
kcycles
Years
Unit
Unit
ms
ms
µs
µs
µs
µs
µs
ms
s
s
s
s