MC908JL16CFAE FREESCALE [Freescale Semiconductor, Inc], MC908JL16CFAE Datasheet - Page 34

• Manufacturer Part Number: MC908JL16CFAE
• Description: Microcontrollers
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

Memory
2.5.2 FLASH Control Register
The FLASH control register (FCLR) controls FLASH program and erase operations.
HVEN — High Voltage Enable Bit
MASS — Mass Erase Control Bit
ERASE — Erase Control Bit
PGM — Program Control Bit
34
This read/write bit enables the charge pump to drive high voltages for program and erase operations
in the array. HVEN can only be set if either PGM = 1 or ERASE = 1 and the proper sequence for
program or erase is followed.
This read/write bit configures the memory for mass erase operation or page erase operation when the
ERASE bit is set.
This read/write bit configures the memory for erase operation. ERASE is interlocked with the PGM bit
such that both bits cannot be equal to 1 or set to 1 at the same time.
This read/write bit configures the memory for program operation. PGM is interlocked with the ERASE
bit such that both bits cannot be equal to 1 or set to 1 at the same time.
1 = High voltage enabled to array and charge pump on
0 = High voltage disabled to array and charge pump off
1 = Mass erase operation selected
0 = Page erase operation selected
1 = Erase operation selected
0 = Erase operation not selected
1 = Program operation selected
0 = Program operation not selected
Address: $FE08
Reset:
Read:
Write:
Bit 7
0
0
Figure 2-3. FLASH Control Register (FLCR)
= Unimplemented
6
0
0
MC68HC908JL16 Data Sheet, Rev. 1.1
5
0
0
4
0
0
HVEN
3
0
MASS
2
0
ERASE
1
0
Freescale Semiconductor
PGM
Bit 0
0