DF6A6.8FU TOSHIBA [Toshiba Semiconductor], DF6A6.8FU Datasheet
DF6A6.8FU
Manufacturer Part Number
DF6A6.8FU
Description
Product for Use Only as Protection against Electrostatic Discharge (ESD).
Manufacturer
TOSHIBA [Toshiba Semiconductor]
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Product for Use Only as Protection against Electrostatic
Discharge (ESD).
* This product is for protection against electrostatic discharge (ESD)
Absolute Maximum Ratings
Electrical Characteristics
Guaranteed Level of ESD Immunity
only and is not intended for any other usage, including without
limitation, the constant voltage diode application.
Criterion: No damage to device elements
The incorporation of four devices in an ultra-compact package reduces
the number of parts and lowers assembly cost.
Note: Using continuously under heavy loads (e.g. the application of high
Zener voltage
Dynamic impedance
Reverse current
Terminal capacitance
(between Cathode and Anode)
Power dissipation
Junction temperature
Storage temperature range
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
(Contact discharge)
Test Condition
Characteristic
Characteristic
IEC61000-4-2
TOSHIBA Diodes for Protecting against ESD Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
DF6A6.8FU
Symbol
Symbol
T
ESD Immunity Level
V
C
Z
T
P
I
stg
R
Z
Z
T
j
± 30 kV
I
I
V
V
Z
Z
R
R
= 5mA
= 5mA
−55~150
= 5V
= 0, f = 1MHz
Rating
200
150
1
Test Condition
Unit
mW
°C
°C
Weight: 6.8 mg (typ.)
JEDEC
JEITA
TOSHIBA
Min
6.4
―
―
―
Typ.
6.8
45
―
―
DF6A6.8FU
1-2T1A
1.CATHODE1
2.CATHODE2
3.ANODE2
4.CATHODE3
5.CATHODE4
6.ANODE1
⎯
⎯
2007-11-01
Max
7.2
0.5
25
―
Unit: mm
Unit
μA
pF
V
Ω
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DF6A6.8FU Summary of contents
Page 1
... Test Condition 5mA 5mA 1MHz T R ESD Immunity Level ± DF6A6.8FU Unit: mm 1.CATHODE1 2.CATHODE2 3.ANODE2 4.CATHODE3 5.CATHODE4 6.ANODE1 ⎯ JEDEC ⎯ JEITA TOSHIBA 1-2T1A Weight: 6.8 mg (typ.) Min Typ. Max Unit 6.4 6.8 7.2 V ― ― ...
Page 2
... Marking Equivalent Circuit 6.8 (Top View 100 DF6A6.8FU Ta=25°C f=1MHz REVERSE VOLTAGE VR (V) 2007-11-01 ...
Page 3
... Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 3 DF6A6.8FU 20070701-EN 2007-11-01 ...