M40Z300MH STMICROELECTRONICS [STMicroelectronics], M40Z300MH Datasheet - Page 10

• Manufacturer Part Number: M40Z300MH
• Description: NVRAM CONTROLLER for up to EIGHT LPSRAM
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

M40Z300, M40Z300W
Figure 7. Address-Decode Time
Note: During system design, compliance with the SRAM timing parameters must comprehend the propagation delay
Table 8. Battery Table
V
I
switching, can produce voltage fluctuations, re-
sulting in spikes on the V
can be reduced if capacitors are used to store en-
ergy, which stabilizes the V
stored in the bypass capacitors will be released as
low going spikes are generated or energy will be
absorbed when overshoots occur.
A ceramic bypass capacitor value of 0.1µF (as
shown in figure 8) is recommended in order to pro-
vide the needed filtering.
In addition to transients that are caused by normal
SRAM operation, power cycling can generate neg-
ative voltage spikes on V
below V
spikes can cause data corruption in the SRAM
while in battery backup mode. To protect from
these voltage spikes, STMicroelectronics recom-
mends connecting a schottky diode from V
V
Schottky diode 1N5817 is recommended for
through hole and MBRS120T3 is recommended
for surface mount.
10/16
CC
CC
SS
M4Z28-BR00SH
M4Z32-BR00SH
transients, including those produced by output
Part Number
NOISE AND NEGATIVE GOING TRANSIENTS
between E and EX
(cathode connected to V
SS
by as much as one volt. These negative
A, B
E
E1 CON -E4 CON
CON
CC
CC
bus. These transients
that drive it to values
CC
CC
Lithium Battery (120mAh) SNAPHAT
Lithium Battery (48mAh) SNAPHAT
bus. The energy
, anode to V
Description
tAS
CC
SS
to
).
tEDL
Figure 8. Supply Voltage Protection
V CC
0.1 F
tEDH or tEDL
AI02551
Package
V CC
V SS
SH
SH
DEVICE
AI00622