2SJ305_07 TOSHIBA [Toshiba Semiconductor], 2SJ305_07 Datasheet
2SJ305_07
Manufacturer Part Number
2SJ305_07
Description
High Speed Switching Applications Analog Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SJ305_07.pdf
(5 pages)
High Speed Switching Applications
Analog Applications
•
•
•
•
•
•
Absolute Maximum Ratings
Marking
High input impedance
Low gate threshold voltage.: V
Excellent switching times.: t
Low drain-source ON resistance: R
Small package.
Complementary to 2SK2009
Drain-source voltage
Gate-source voltage
DC drain current
Drain power dissipation
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Note: This transistor is electrostatic sensitive device.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Please handle with caution.
Characteristics
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
t
on
off
th
= 0.06 μs (typ.)
= 0.15 μs (typ.)
= −0.5~−1.5 V
DS (ON)
(Ta = 25°C)
Symbol
V
V
T
T
P
GSS
I
DS
stg
D
ch
D
2SJ305
= 2.4 Ω (typ.)
−55~150
Rating
−200
−30
±20
200
150
1
Equivalent Circuit
Unit
mW
mA
°C
°C
V
V
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
TO-236MOD
2-3F1F
SC-59
2007-11-01
2SJ305
Unit: mm
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2SJ305_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Applications • High input impedance • Low gate threshold voltage.: V • Excellent switching times off • Low drain-source ON resistance: R • ...
Page 2
Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshould voltage Forward transfer admittance Drain-source ON resistance Input capacitance Reverse transfer capacitance Output capacitance Turn-on time Switching time Turn-off time Switching Time Test Circuit (Ta = ...
Page 3
3 2SJ305 2007-11-01 ...
Page 4
4 2SJ305 2007-11-01 ...
Page 5
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...