2SK3017_06 TOSHIBA [Toshiba Semiconductor], 2SK3017_06 Datasheet
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2SK3017_06
Related parts for 2SK3017_06
2SK3017_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π−MOSIII) DC−DC Converter, Relay Drive and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I DSS Enhancement mode : V th Absolute Maximum Ratings ...
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Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...
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3 2SK3017 2006-11-10 ...
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4 2SK3017 2006-11-10 ...
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Ω 24 2SK3017 1 ⎛ B ⎞ VDSS 2 = ⋅ L ⋅ I ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...