2SK3017_06 TOSHIBA [Toshiba Semiconductor], 2SK3017_06 Datasheet - Page 2

• Manufacturer Part Number: 2SK3017_06
• Description: Silicon N Channel MOS Type DC−DC Converter, Relay Drive and Motor Drive Applications
• Manufacturer: TOSHIBA [Toshiba Semiconductor]

Electrical Characteristics
Source−Drain Ratings and Characteristics
Marking
Gate leakage current
Gate−source breakdown voltage
Drain cut−off current
Drain−source breakdown voltage
Gate threshold voltage
Drain−source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge (Gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) charge
Continuous drain reverse current
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Characteristics
Characteristics
TOSHIBA
K3017
Rise time
Turn−on time
Fall time
Turn−off time
(Note 1)
(Note 1)
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
V
V
(Ta = 25°C)
R
Symbol
Symbol
(BR) GSS
(BR) DSS
DS (ON)
V
I
I
I
C
|Y
C
C
Q
Q
GSS
DRP
DSS
I
V
t
Q
t
Q
DSF
DR
t
off
oss
t
on
rss
t
iss
rr
gs
gd
th
fs
r
f
g
rr
|
V
I
V
I
V
V
V
V
V
I
I
dI
G
D
DR
DR
GS
DS
DS
GS
DS
DS
DD
DR
= 10 mA, V
= ±10 μA, V
= 8.5 A, V
= 8.5 A, V
= 720 V, V
= 10 V, I
= 15 V, I
= 25 V, V
= ±30 V, V
= 10 V, I
≈ 400 V, V
/ dt = 100 A / μs
2
D
D
D
GS
(Ta = 25°C)
GS
GS
GS
DS
Test Condition
Test Condition
= 1 mA
= 4 A
DS
GS
= 4 A
GS
= 0 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 0 V
= 0 V
= 0 V
= 10 V, I
—
—
D
= 8 A
±30
900
Min
Min
2.0
3.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2150
1300
Typ.
1.05
Typ.
14.5
220
120
7.0
—
—
—
—
—
35
25
60
25
70
37
33
—
—
—
2006-11-10
2SK3017
1.25
25.5
−1.9
Max
Max
±10
100
4.0
8.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
Unit
μA
μA
nC
μC
pF
ns
ns
V
V
V
Ω
S
A
A
V