2SK330_07 TOSHIBA [Toshiba Semiconductor], 2SK330_07 Datasheet

2SK330_07

Manufacturer Part Number

2SK330_07

Description

Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK330_07.pdf (5 pages)

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For Audio Amplifier, Analog Switch, Constant Current

and Impedance Converter Applications

•

Absolute Maximum Ratings

Electrical Characteristics

High breakdown voltage: V

High input impedance: I

Low R

Complementary to 2SJ105

Small package

Gate-drain voltage

Gate current

Drain power dissipation

Junction temperature

Storage temperature range

Note:

Gate cut-off current

Gate-drain breakdown voltage

Drain current

Gate-source cut-off voltage

Forward transfer admittance

Drain-source ON resistance

Input capacitance

Reverse transfer capacitance

Note: I

DS (ON)

DSS

Using continuously under heavy loads (e.g. the application of

high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings.

Please design the appropriate reliability upon reviewing the

Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and

individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA

: R

DS (ON)

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type

GSS

= 320 Ω (typ.) (I

GDS

= −1 nA (max) (V

(Ta = 25°C)

= −50 V

(Ta = 25°C)

Symbol

GS (OFF)

(BR) GDS

⎪Y

GSS

DSS

GDS

stg

rss

iss

(ON)

(Note)

DSS

⎪

2SK330

= 5 mA)

= −30 V)

−55~125

Rating

= 0, I

= 10 V, V

= 10 V, I

= 10 V, V

= 10 mV, V

= 10 V, V

= −30 V, V

= −10 V, I

−50

200

125

= −100 μA

Test Condition

= 0.1 μA

= 0, f = 1 MHz

= 0

= 0, f = 1 kHz

= 0, f = 1 MHz

= 0

= 0, I

Unit

°C

DSS

= 5 mA

Weight: 0.13 g (typ.)

JEDEC

JEITA

TOSHIBA

−0.7

Min

−50

1.2

1.5

⎯

Typ.

320

9.0

2.5

⎯

2-4E1B

2007-11-01

―

−1.0

−6.0

Max

⎯

2SK330

Unit: mm

Unit

Related parts for 2SK330_07

2SK330_07 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: V GDS • High input impedance −1 nA (max) (V GSS • Low R ...

Page 2

2 2SK330 2007-11-01 ...

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3 2SK330 2007-11-01 ...

Page 4

4 2SK330 2007-11-01 ...

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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...

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