2SK330_07 TOSHIBA [Toshiba Semiconductor], 2SK330_07 Datasheet
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2SK330_07
Manufacturer Part Number
2SK330_07
Description
Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SK330_07.pdf
(5 pages)
For Audio Amplifier, Analog Switch, Constant Current
and Impedance Converter Applications
•
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
High breakdown voltage: V
High input impedance: I
Low R
Complementary to 2SJ105
Small package
Gate-drain voltage
Gate current
Drain power dissipation
Junction temperature
Storage temperature range
Note:
Gate cut-off current
Gate-drain breakdown voltage
Drain current
Gate-source cut-off voltage
Forward transfer admittance
Drain-source ON resistance
Input capacitance
Reverse transfer capacitance
Note: I
DS (ON)
DSS
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and
individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Characteristics
Characteristics
classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
: R
DS (ON)
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
GSS
= 320 Ω (typ.) (I
GDS
= −1 nA (max) (V
(Ta = 25°C)
= −50 V
(Ta = 25°C)
V
V
R
Symbol
Symbol
GS (OFF)
(BR) GDS
DS
V
⎪Y
I
I
C
T
C
GSS
DSS
P
GDS
I
T
stg
rss
G
iss
fs
D
(ON)
j
(Note)
DSS
⎪
2SK330
= 5 mA)
GS
V
V
V
V
V
V
V
V
GS
DS
DS
DS
DS
DS
DS
GD
= −30 V)
−55~125
Rating
= 0, I
= 10 V, V
= 10 V, I
= 10 V, V
= 10 mV, V
= 10 V, V
= −30 V, V
= −10 V, I
−50
200
125
10
1
G
= −100 μA
Test Condition
D
GS
GS
GS
D
= 0.1 μA
DS
GS
= 0, f = 1 MHz
= 0
= 0, f = 1 kHz
= 0, f = 1 MHz
= 0
= 0, I
Unit
mW
mA
°C
°C
V
DSS
= 5 mA
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
−0.7
Min
−50
1.2
1.5
⎯
⎯
⎯
⎯
Typ.
320
9.0
2.5
⎯
⎯
⎯
⎯
4
2-4E1B
2007-11-01
―
―
−1.0
−6.0
Max
14
⎯
⎯
⎯
⎯
⎯
2SK330
Unit: mm
Unit
mA
mS
nA
pF
pF
Ω
V
V
Related parts for 2SK330_07
2SK330_07 Summary of contents
Page 1
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications • High breakdown voltage: V GDS • High input impedance −1 nA (max) (V GSS • Low R ...
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2 2SK330 2007-11-01 ...
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3 2SK330 2007-11-01 ...
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4 2SK330 2007-11-01 ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...