2SK3312_09 TOSHIBA [Toshiba Semiconductor], 2SK3312_09 Datasheet

2SK3312_09

Manufacturer Part Number

2SK3312_09

Description

Chopper Regulator, DC?DC Converter and Motor Drive

Manufacturer

TOSHIBA [Toshiba Semiconductor]

Datasheet

1.2SK3312_09.pdf (6 pages)

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

Low drain−source ON resistance

High forward transfer admittance

Low leakage current : I

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in temperature,

etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage,

etc.) are within the absolute maximum ratings. Please design the

appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and

estimated failure rate, etc).

temperature

Characteristics

= 6 A

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV)

= 90 V, T

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

: V

DSS

= 25°C (initial), L = 16.8 mH, R

(Note 2)

= 3.0 to 5.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

Symbol

stg

th (ch−a)

th (ch−c)

DS (ON)

2SK3312

| = 3.5 S (typ.)

= 10 V, I

= 0.9 Ω (typ.)

−55 to 150

= 600 V)

Rating

600

±30

345

150

6.5

1.92

83.3

Max

= 25 Ω,

= 1 mA)

°C / W

Unit

°C

Weight: 1.5 g (typ.)

JEDEC

JEITA

TOSHIBA

JEDEC

JEITA

TOSHIBA

2-10S1B

2-10S2B

2009-09-29

―

2SK3312

Unit: mm

Related parts for 2SK3312_09

2SK3312_09 Summary of contents

Page 1

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-−MOSV) Chopper Regulator, DC−DC Converter and Motor Drive Applications Low drain−source ON resistance High forward transfer admittance Low leakage current : I = 100 μA (max) (V DSS Enhancement mode : ...

Page 2

Electrical Characteristics Characteristics Gate leakage current Gate−source breakdown voltage Drain cut−off current Drain−source breakdown voltage Gate threshold voltage Drain−source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn−on time Switching time Fall time Turn−off ...

Page 3

I – 7. DRAIN－SOURCE VOLTAGE V I – ...

Page 4

R – (ON =10V -80 - CASE ...

Page 5

Ω 16 2SK3312 1 B ⎛ ⎞ VDSS = ⋅ ⋅ 2 ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...

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