2SA1048_07 TOSHIBA [Toshiba Semiconductor], 2SA1048_07 Datasheet
2SA1048_07
Manufacturer Part Number
2SA1048_07
Description
Audio Frequency Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1048_07.pdf
(3 pages)
Audio Frequency Amplifier Applications
•
•
•
•
•
•
Absolute Maximum Ratings
Electrical Characteristics
Small package
High voltage: V
High h
Excellent h
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SC2458
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods” ) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE:
FE
Characteristics
Characteristics
h
classification O: 70~140, Y: 120~240, GR: 200~400
FE
FE
linearity: h
= 70~400
CEO
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
= −50 V (min)
FE
(I
C
(Ta = 25°C)
= −0.1 mA)/h
(Ta = 25°C)
V
Symbol
Symbol
V
V
V
CE (sat)
I
I
T
CBO
EBO
h
C
P
NF
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SA1048
j
(Note)
FE
V
V
V
I
V
V
V
R
C
CB
EB
CE
CE
CB
CE
(I
G
= −100 mA, I
C
−55~125
= 10 kΩ
Rating
= −50 V, I
= −5 V, I
= −6 V, I
= −10 V, I
= −10 V, I
= −6 V, I
−150
= −2 mA) = 0.95 (typ.)
−50
−50
−50
200
125
−5
1
Test Condition
C
C
C
E
C
E
= 0
= −2 mA
= −0.1 mA, f = 1 kHz,
B
= 0
= 0, f = 1 MHz
= −1 mA
= −10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.13 g (typ.)
JEDEC
JEITA
TOSHIBA
Min
70
80
⎯
⎯
⎯
⎯
⎯
Typ.
−0.1
1.0
⎯
⎯
⎯
⎯
4
2-4E1A
2007-11-01
―
―
2SA1048
−0.1
−0.1
−0.3
Max
400
10
⎯
7
Unit: mm
MHz
Unit
μA
μA
pF
dB
V
Related parts for 2SA1048_07
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
TRANSISTOR (AUDIO FREQUENCY AMPLIFIER APPLICATIONS)
Manufacturer:
Toshiba Semiconductor
Datasheet:
Part Number:
Description:
TOSHIBA Bipolar Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Bi-CMOS Digital Integrated Circuit Silicon Monolithic
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (MOSV)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U−MOSIII)
Manufacturer:
TOSHIBA [Toshiba Semiconductor]
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [TOSHIBA IGBT Module Silicon N Channel IGBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [SILICON N CHANNEL 1GBT]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [GTR Module Silicon N Channel IGBT High Power Switching Applications Motor Control Applications]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
Toshiba Semiconductor [Power Module]
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA GTR Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA Intelligent Power Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA INTELLIGENT POWER MODULE SILICON N CHANNEL LGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
Part Number:
Description:
TOSHIBA IGBT Module Silicon N Channel IGBT
Manufacturer:
TOSHIBA Semiconductor CORPORATION
Datasheet:
2SA1048_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications • Small package • High voltage −50 V (min) CEO • High 70~400 FE: FE • Excellent h linearity ...
Page 2
2 2SA1048 2007-11-01 ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...