2SC535 HITACHI [Hitachi Semiconductor], 2SC535 Datasheet - Page 3

• Manufacturer Part Number: 2SC535
• Description: Silicon NPN Epitaxial Planar
• Manufacturer: HITACHI [Hitachi Semiconductor]

Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector to emitter breakdown
voltage
Emitter to base breakdown
voltage
Collector cutoff current
DC current transfer ratio
Base to emitter voltage
Collector to emitter saturation
voltage
Gain bandwidth product
Collector output capacitance
Power gain
Noise figure
Input admittance (typ)
Reverse transfer admittance
(typ)
Foward transfer admittance
(typ)
Output admittance (typ)
Note:
B
60 to 120
1. The 2SC535 is grouped by h
C
100 to 200
Symbol
V
V
V
I
h
V
V
f
Cob
PG
NF
yie
yre
yfe
yoe
CBO
T
FE
(BR)CBO
(BR)CEO
(BR)EBO
BE
CE(sat)
*
1
FE
as follows.
Min
30
20
4
—
60
—
—
450
—
17
—
1.3 + j5.3
–0.078 – j0.41
32 – j10
0.08 + j0.82
Typ
—
—
—
—
—
0.72
0.17
940
0.9
20
3.5
Max
—
—
—
0.5
200
—
—
—
1.2
—
5.5
Unit
V
V
V
V
V
MHz
pF
dB
dB
mS
mS
mS
mS
A
Test conditions
I
I
I
V
V
V
I
V
V
V
V
V
f = 100 MHz
f = 100 MHz, R
f = 100 MHz
C
C
E
C
CB
CE
CE
CE
CB
CE
CE
CE
= 10 A, I
= 10 A, I
= 1 mA, R
= 20 mA, I
= 10 V, I
= 6 V, I
= 6 V, I
= 6 V, I
= 10 V, I
= 6 V, I
= 6 V, I
= 6 V, I
C
C
C
C
C
C
C
E
E
E
BE
= 1 mA
= 1 mA
= 5 mA
= 1 mA,
= 1 mA,
= 1 mA,
B
= 0
= 0
= 0
= 0, f = 1 MHz
=4 mA
=
g
= 50
2SC535
3