2SC535 HITACHI [Hitachi Semiconductor], 2SC535 Datasheet - Page 8

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2SC535

Manufacturer Part Number
2SC535
Description
Silicon NPN Epitaxial Planar
Manufacturer
HITACHI [Hitachi Semiconductor]
Datasheet

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2SC535
8
–0.20
Reverse Transfer Conductance g
2.4
2.0
1.6
1.2
0.8
0.4
y
V
0
re
–0.16 –0.12 –0.08
CE
Reverse Transfer Admittance
= g
= 6 V
y
V
Output Admittance Characteristics
oe
CE
re
Output Conductance g
0.1
I
= g
+ jb
C
Characteristics
= 6 V
= 1 mA 2 3
oe
re
50
+ jb
0.2
70
100
oe
I
C
0.3
= 5 mA 3 2 1
150
f = 50 MHz
–0.04
200
0.4
150
re
100
oe
5
f = 200 MHz
70
(mS)
(mS)
0.5
0
–0.2
–0.4
–0.6
–0.8
–1.0
0.6
–100
–120
–20
–40
–60
–80
1.0
0.5
10
5
2
0
1
Forward Transfer Conductance g
I
Collector to Emitter Voltage V
C
= 1 mA
y
I
f = 100 MHz
5 mA
Input Admittance vs. Collector
C
20
ie
Forward Transfer Admittance
= 1 mA
= g
2 mA
3 mA
200
2
ie
to Emitter Voltage
40
+ jb
Characteristics
ie
60
150
5
b
g
80
ie
ie
y
V
fe
CE
100
= g
100
= 6 V
10
fe
CE
f = 50 MHz
fe
+ jb
120
70
(mS)
(V)
fe
20

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