2SK3439_09 TOSHIBA [Toshiba Semiconductor], 2SK3439_09 Datasheet
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2SK3439_09
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2SK3439_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) DC-DC Converter Applications Relay Drive and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 µA (max) ...
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Marking Part No. (or abbreviation code) K3439 Lot No. Note 4 Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise ...
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I – 100 Common source 25°C 8 Pulse test 2 0.2 0.4 0.6 0.8 Drain-source voltage V ( – V ...
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R – (ON) 6 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 10000 ...
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Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 Single 0.01 0.00001 0.0001 Safe operating area 300 I D max (pulsed) * 100 μ max (continuous) 100 operation ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...