2SC5317FT_07 TOSHIBA [Toshiba Semiconductor], 2SC5317FT_07 Datasheet
2SC5317FT_07
Manufacturer Part Number
2SC5317FT_07
Description
Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SC5317FT_07.pdf
(3 pages)
VHF-UHF Band Low Noise Amplifier Applications
(chip: f
•
•
Absolute Maximum Ratings
Microwave Characteristics
Electrical Characteristics
Note : C
Note: Using continuously under heavy loads (e.g. the application of high
Low Noise Figure :NF = 1.3dB (f = 2GHz)
High Gain:|S21e|
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Current
Base-Current
Collector Power dissipation
Junction temperature
Storage temperature Range
Transition Frequency
Insertion Gain
Noise Figure
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Output Capacitance
Reverse Transistor Capacitance
T
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
re
= 16 GHz series)
is measured by 3 terminal method with capacitance Bridge.
Characteristics
Characteristics
haracteristics
2
= 9dB (f = 2GHz)
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
(Ta = 25°C)
(Ta = 25°C)
|S21e|
|S21e|
(Ta = 25°C)
Symbol
Symbol
2SC5317FT
NF (1)
NF (2)
Symbol
I
I
V
V
V
CBO
EBO
h
C
C
T
fT
FE
P
CBO
CEO
EBO
ob
I
I
re
T
stg
C
B
C
2
2
j
(1)
(2)
V
V
V
V
V
V
V
V
V
CE
CE
CE
CE
CE
CB
EB
CE
CB
−55~125
= 1 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 3 V, I
= 8 V, I
= 3 V, I
= 2.5 V, I
Rating
100
125
1.5
20
10
8
5
1
CTest Condition
C
C
C
C
C
E
C
C
Test Condition
E
= 15 mA
= 15 mA, f = 1 GHz
= 15 mA, f = 2 GHz
= 5 mA, f = 1 GHz
= 5 mA, f = 2 GHz
= 0
= 0
= 15 mA
= 0, f = 1 MHz (Note )
Unit
mW
mA
mA
°C
°C
V
V
V
TESM
Weight:0.0022g (typ.)
JEDEC
JEITA
TOSHIBA
Min
Min
12
50
―
―
―
―
―
―
9
6
Typ.
Typ.
0.9
1.3
0.6
0.4
―-
15
―
―
―
9
2SC5317FT
2-1B1A
2007-11-01
―
―
Max
Max
0.85
250
1.8
2.2
―
―
―
―
1
1
Unit: mm
GHz
Unit
Unit
dB
dB
µA
µA
pF
pF
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2SC5317FT_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type VHF-UHF Band Low Noise Amplifier Applications (chip GHz series) T • Low Noise Figure :NF = 1.3dB (f = 2GHz) 2 • High Gain:|S21e| = 9dB (f = 2GHz) Absolute ...
Page 2
Caution This device is sensitive to electrostatic discharge. Please handle with caution. Marking Type Name 2SC5317FT 2007-11-01 ...
Page 3
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...