2SK3442_06 TOSHIBA [Toshiba Semiconductor], 2SK3442_06 Datasheet
2SK3442_06
Related parts for 2SK3442_06
2SK3442_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSII) Switching Regulator, DC-DC Converter and Motor Drive Applications • Low drain-source ON resistance: R • High forward transfer admittance: ⎪Y • Low leakage current 100 μA (V DSS ...
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Marking Part No. (or abbreviation code) K3442 Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. Electrical Characteristics Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance ...
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I – 100 15 8 Common source Tc = 25°C 10 Pulse test 0.4 0.8 1.2 1.6 Drain-source voltage V ( – ...
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R – (ON) 50 Common source Pulse test −80 − Case temperature Tc (°C) Capacitance – 50000 30000 ...
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Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 Single pulse 0.01 10 μ 100 μ Safe operating area 1000 300 I D max (pulsed) * 100 μ 100 I D ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...