2SK3453_09 TOSHIBA [Toshiba Semiconductor], 2SK3453_09 Datasheet
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2SK3453_09
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2SK3453_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model: V ...
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Electrical Characteristics Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-OFF current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-ON time Switching time Fall time Turn-OFF ...
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Common source 25°C 8 Pulse test Drain-source voltage V (V) DS − ...
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(ON) 10 Common source Pulse test 2 −80 − Case temperature Tc (°C) Capacitance – 5000 ...
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Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Single pulse 0.001 10 μ 100 μ Safe operating area 100 max (pulsed max (continuous operation ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...