2SA1202_07 TOSHIBA [Toshiba Semiconductor], 2SA1202_07 Datasheet
2SA1202_07
Manufacturer Part Number
2SA1202_07
Description
Power Amplifier Applications Voltage Amplifier Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.2SA1202_07.pdf
(4 pages)
Power Amplifier Applications
Voltage Amplifier Applications
•
•
•
•
Absolute Maximum Ratings
Suitable for driver of 30 to 35 watts audio amplifier
Small flat package
P
Complementary to 2SC2882
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note 1: Mounted on a ceramic substrate (250 mm
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
C
= 1.0 to 2.0 W (mounted on a ceramic substrate)
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristics
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process)
(Ta = 25°C)
Symbol
V
V
V
T
P
P
CBO
CEO
EBO
I
I
(Note 1)
T
stg
C
B
C
C
2SA1202
j
2
−55 to 150
× 0.8 t)
Rating
−400
1000
−80
−80
−80
500
150
−5
1
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.05 g (typ.)
JEDEC
JEITA
TOSHIBA
PW-MINI
2-5K1A
SC-62
2006-11-09
―
2SA1202
Unit: mm
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2SA1202_07 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) Power Amplifier Applications Voltage Amplifier Applications • Suitable for driver watts audio amplifier • Small flat package • 1.0 to 2.0 W (mounted on a ceramic ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Note 3: h classification 140, Y: 120 to 240 FE(1) Marking F ...
Page 3
I – Common emitter −400 Ta = 25°C −5 −3 −300 −2 −200 −1 −100 −0 −2 −4 −6 −8 0 Collector-emitter voltage (sat) – ...
Page 4
RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...