2SK3471_06 TOSHIBA [Toshiba Semiconductor], 2SK3471_06 Datasheet - Page 2

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2SK3471_06

Manufacturer Part Number
2SK3471_06
Description
Silicon N Channel MOS Type Switching Regulator and DC-DC Converter Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
Marking
Electrical Characteristics (Ta = 25°C)
Source-Drain Ratings and Characteristics
Gate leakage current
Drain-source breakdown voltage
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge
Gate-drain (“miller”) charge
Continuous drain reverse current (Note 1)
Pulse drain reverse current
Forward voltage (diode)
Reverse recovery time
Reverse recovery charge
Lot No.
Characteristics
Characteristics
Z
Rise time
Turn-ON time
Fall time
Turn-OFF time
G
(Note 1)
V
V
Part No. (or abbreviation code)
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
R
Symbol
(BR) GSS
(BR) DSS
DS (ON)
⎪Y
I
I
C
C
C
Q
Q
GSS
DSS
V
t
t
Q
oss
t
on
off
rss
t
iss
gs
gd
th
fs
r
f
Symbol
g
V
I
I
DRP
Q
DSF
DR
t
rr
rr
Duty < = 1%, t
V
I
V
I
V
V
V
V
V
V
G
D
GS
DS
DS
GS
DS
DS
DD
GS
= 10 mA, V
= ±10 μA, V
10 V
I
I
dI
0 V
DR
DR
= 500 V, V
= 10 V, I
= 10 V, I
= 10 V, V
= ±25 V, V
= 10 V, I
∼ − 400 V, V
DR
2
= 0.5 A, V
= 0.5 A, V
(Ta = 25°C)
/dt = 100 A/μs
w
Test Condition
D
D
D
GS
GS
= 10 μs
DS
Test Condition
GS
= 1 mA
= 0.25 A
DS
= 0.25 A
GS
= 0 V
= 0 V, f = 1 MHz
= 0 V
GS
GS
= 0 V
= 0 V
= 10 V, I
I
D
= 0 V
= 0 V,
= 0.25 A
V
DD
D
R
∼ − 250 V
= 0.5 A
L
= 1 kΩ
V
OUT
±30
500
Min
Min
2.0
0.2
Typ.
Typ.
190
380
0.4
3.8
1.9
1.9
10
75
24
11
18
54
95
7
2006-11-02
2SK3471
Max
−1.5
Max
±10
100
4.0
0.5
1.5
18
Unit
Unit
μA
μA
nC
nC
pF
ns
ns
V
V
V
Ω
S
A
A
V

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