2SK3472_06 TOSHIBA [Toshiba Semiconductor], 2SK3472_06 Datasheet
2SK3472_06
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2SK3472_06 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS V) Switching Regulator Applications • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (max) (V DSS • Enhancement model ...
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Electrical Characteristics (Ta = 25°C) Characteristic Gate leakage current Drain-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON-resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall ...
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I – 1.0 Common source 10 5. 25°C pulse test 6.0 0.8 8.0 0.6 0 Drain-source voltage V ( – V ...
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(ON) 16 Common source pulse test 0 −80 − Case temperature Tc (°C) Capacitance – 500 ...
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Duty = 0.5 0.3 0.2 0.1 0.1 0.05 0.02 0.03 0.01 0.01 10 μ 100 μ Safe operating area max (pulsed max (continuous operation ...
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RESTRICTIONS ON PRODUCT USE • The information contained herein is subject to change without notice. • TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to ...