2SK3934_09 TOSHIBA [Toshiba Semiconductor], 2SK3934_09 Datasheet
2SK3934_09
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2SK3934_09 Summary of contents
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TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOSVI) Switching Regulator Applications • Low drain-source ON resistance: R • High forward transfer admittance: |Y • Low leakage current 100 μA (V DSS • Enhancement model 2.0 ...
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Electrical Characteristics Characteristic Gate leakage current Gate-source breakdown voltage Drain cutoff current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off ...
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I – COMMON SOURCE Tc = 25°C PULSE TEST 16 10V 6. DRAIN−SOURCE VOLTAGE – ...
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R – (ON) 1000 COMMON SOURCE 800 PULSE TEST 600 15A 400 3.8 200 0 −80 − CASE TEMPERATURE Tc (°C) C – 10000 1000 ...
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Duty=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 SINGLE PULSE 0.001 10μ 100μ SAFE OPERATING AREA 100 I D max (PULSED) * 100 μ max (CONTINUOUS OPERATION 1 Tc ...
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RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...