2SA1428_09 TOSHIBA [Toshiba Semiconductor], 2SA1428_09 Datasheet
2SA1428_09
Related parts for 2SA1428_09
2SA1428_09 Summary of contents
Page 1
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Power Amplifier Applications Power Switching Applications • Low collector-emitter saturation voltage −0.5 V (max (sat) • High-speed switching 1.0 μs (typ.) stg • Complementary to 2SC3668 ...
Page 2
Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Turn-on time Switching time Storage time Fall time Note 2: h classification O: 70 ...
Page 3
V – Common emitter −1 25° −5 mA −0.8 −10 −20 −40 −80 −120 −0.6 −160 −0.4 −200 −0 −0.4 −0.8 −1.2 −1.6 −2.0 Collector current I ( ...
Page 4
I – −2.0 Common emitter −2 V −1.5 −1 100°C −55 25 −0 −0.4 −0.8 −1.2 Base-emitter voltage V BE Safe Operating Area −10 − max (pulsed) −3 ...
Page 5
RESTRICTIONS ON PRODUCT USE • Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively “Product”) without notice. • This document and ...