2SC3112_07 TOSHIBA [Toshiba Semiconductor], 2SC3112_07 Datasheet

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2SC3112_07

Manufacturer Part Number
2SC3112_07
Description
Silicon NPN Epitaxial Type (PCT process) For Audio Amplifier and Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
For Audio Amplifier and Switching Applications
Absolute Maximum Ratings
Electrical Characteristics
High DC current gain
High breakdown voltage: V
High collector current: I
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Note: h
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
FE
Characteristics
Characteristics
classification A: 600~1800, B: 1200~3600
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
:
h
C
FE
= 150 mA (max)
CEO
= 600~3600
(Ta = 25°C)
= 50 V
(Ta = 25°C)
V
Symbol
Symbol
NF (1)
NF (2)
V
V
V
CE (sat)
I
I
T
CBO
EBO
h
C
P
CBO
CEO
EBO
I
I
T
f
stg
FE
C
B
T
ob
C
2SC3112
j
(Note)
V
V
V
I
V
V
V
R
V
R
C
CB
EB
CE
CE
CB
CE
CE
G
G
= 100 mA, I
−55~125
= 10 kΩ
= 10 kΩ
Rating
= 50 V, I
= 5 V, I
= 6 V, I
= 10 V, I
= 10 V, I
= 6 V, I
= 6 V, I
150
400
125
50
50
30
5
1
C
C
C
C
Test Condition
E
C
E
= 0
= 2 mA
= 0.1 mA, f = 100 Hz,
= 0.1 mA, f = 1 kHz,
B
= 0
= 0, f = 1 MHz
= 10 mA
= 10 mA
Unit
mW
mA
mA
°C
°C
V
V
V
Weight: 0.21 g (typ.)
JEDEC
JEITA
TOSHIBA
600
100
Min
Typ.
0.12
250
3.5
0.5
0.3
2-5F1B
TO-92
SC-43
2007-11-01
3600
2SC3112
0.25
Max
0.1
0.1
Unit: mm
MHz
Unit
μA
μA
pF
dB
V

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