SUP40N10-35-E3 VISHAY [Vishay Siliconix], SUP40N10-35-E3 Datasheet
SUP40N10-35-E3
Related parts for SUP40N10-35-E3
SUP40N10-35-E3 Summary of contents
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... V (V) r (BR)DSS DS(on) 0.035 @ V GS 105 105 0.038 @ V GS TO-220AB Top View Ordering Information: SUP40N10-35—E3 ABSOLUTE MAXIMUM RATINGS (T Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (T Continuous Drain Current (T = 175_C) = 175_C Pulsed Drain Current Avalanche Current a Repetitive Avalanche Energy ...
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... SUP40N10-35 Vishay Siliconix SPECIFICATIONS (T =25_C UNLESS OTHERWISE NOTED) J Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current g a On-State Drain Current a a Drain Source On State Resistance Drain-Source On-State Resistance a Forward Transconductance b Dynamic Input Capacitance Output Capacitance ...
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... 0.08 0.06 25_C 125_C 0.04 0.02 0. 100 0 SUP40N10-35 Vishay Siliconix Transfer Characteristics T = 125_C C 25_C −55_C − Gate-to-Source Voltage (V) GS On-Resistance vs. Drain Current − Drain Current (A) ...
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... SUP40N10-35 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) On-Resistance vs. Junction Temperature 2 2.0 1.5 1.0 0.5 0.0 −50 − − Junction Temperature (_C) J Avalanche Current vs. Time 1000 100 150_C AV A 0.1 0.00001 0.0001 0.001 0.01 t (Sec) in www.vishay.com 4 New Product ...
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... S-40445—Rev. A, 15-Mar-04 New Product 1000 100 10 1 0.1 125 150 175 Normalized Thermal Transient Impedance, Junction-to-Case −2 10 Square Wave Pulse Duration (sec) SUP40N10-35 Vishay Siliconix Safe Operating Area Limited by r DS(on 100 dc, 100 25_C C Single Pulse ...
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Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description ...