SUP40N10-35-E3 VISHAY [Vishay Siliconix], SUP40N10-35-E3 Datasheet - Page 4

• Manufacturer Part Number: SUP40N10-35-E3
• Description: N-Channel 105-V (D-S) 175C MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

SUP40N10-35
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
1000
2.5
2.0
1.5
1.0
0.5
0.0
100
0.00001
0.1
10
−50 −25
1
I
AV
On-Resistance vs. Junction Temperature
V
I
D
GS
(A) @ T
= 15 A
0.0001
= 10 V
T
0
J
Avalanche Current vs. Time
A
− Junction Temperature (_C)
= 150_C
25
0.001
50
t
in
I
AV
(Sec)
75
(A) @ T
0.01
100
A
= 25_C
125
0.1
150
175
1
New Product
100
140
135
130
125
120
115
110
105
10
1
−50 −25
0
I
D
Source-Drain Diode Forward Voltage
= 10 mA
Drain-Source Breakdown Voltage vs.
V
T
SD
0
T
J
0.3
J
− Junction Temperature (_C)
= 150_C
− Source-to-Drain Voltage (V)
Junction Temperature
25
50
0.6
75
100
S-40445—Rev. A, 15-Mar-04
Document Number: 72797
T
125
0.9
J
= 25_C
150
175
1.2