SUP40N10-35-E3 VISHAY [Vishay Siliconix], SUP40N10-35-E3 Datasheet - Page 3

• Manufacturer Part Number: SUP40N10-35-E3
• Description: N-Channel 105-V (D-S) 175C MOSFET
• Manufacturer: VISHAY [Vishay Siliconix]

Document Number: 72797
S-40445—Rev. A, 15-Mar-04
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
3000
2400
1800
1200
100
600
75
60
45
30
15
80
60
40
20
0
0
0
0
0
0
T
C
= −55_C
15
20
C
2
V
V
DS
rss
DS
Output Characteristics
− Drain-to-Source Voltage (V)
− Drain-to-Source Voltage (V)
V
I
Transconductance
D
GS
− Drain Current (A)
Capacitance
= 10 thru 6 V
30
40
4
C
C
oss
iss
45
60
6
60
80
8
125_C
25_C
5 V
4 V
100
10
75
New Product
0.08
0.06
0.04
0.02
0.00
75
60
45
30
15
20
16
12
0
8
4
0
0
0
0
V
I
D
DS
= 40 A
10
On-Resistance vs. Drain Current
1
= 50 V
15
V
GS
Q
Transfer Characteristics
20
g
− Gate-to-Source Voltage (V)
I
D
− Total Gate Charge (nC)
2
− Drain Current (A)
V
Gate Charge
30
GS
30
T
= 6 V
Vishay Siliconix
C
SUP40N10-35
25_C
3
= 125_C
40
45
V
4
GS
50
= 10 V
www.vishay.com
60
−55_C
5
60
75
70
6
3