SSM3K7002F_05 TOSHIBA [Toshiba Semiconductor], SSM3K7002F_05 Datasheet
SSM3K7002F_05
Manufacturer Part Number
SSM3K7002F_05
Description
High-Speed Switching Applications
Manufacturer
TOSHIBA [Toshiba Semiconductor]
Datasheet
1.SSM3K7002F_05.pdf
(5 pages)
High-Speed Switching Applications
Analog Switch Applications
•
•
Maximum Ratings
Electrical Characteristics
Small package
Low ON-resistance
Drain-source voltage
Gate-source voltage
Drain current
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
Gate leakage current
Drain-source breakdown voltage
Drain cutoff current
Gate threshold voltage
Forward transfer admittance
Drain-source ON-resistance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Characteristics
Characteristics
Turn-on delay time
Turn-off delay time
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
: R
: R
: R
DC
Pulse
(Ta = 25°C)
on
on
on
= 3.3 Ω (max) (@V
= 3.2 Ω (max) (@V
= 3.0 Ω (max) (@V
(Ta = 25°C)
SSM3K7002F
Symbol
V
V
T
I
T
P
GSS
V
I
DP
DS
stg
R
D
ch
D
Symbol
(BR) DSS
DS (ON)
⎪Y
td
td
I
I
C
C
C
GSS
DSS
V
oss
(on)
(off)
rss
iss
th
fs
GS
GS
GS
⎪
= 4.5 V)
= 5 V)
= 10 V)
−55 to 150
V
I
V
V
V
I
I
I
V
V
V
D
D
D
D
Rating
GS
DS
DS
DS
DS
DD
GS
± 20
200
800
200
150
60
= 0.1 mA, V
= 500 mA, V
= 100 mA, V
= 100 mA, V
1
= 60 V, V
= 10 V, I
= 10 V, I
= 25 V, V
= ± 20 V, V
= 30 V , I
= 0 to 10 V
Test Condition
D
D
GS
GS
GS
= 0.25 mA
= 200 mA
GS
GS
GS
D
DS
Unit
mW
mA
°C
°C
V
V
= 0
= 0, f = 1 MHz
= 200 mA ,
= 0
= 10 V
= 5 V
= 4.5 V
= 0
Weight: 0.012 g (typ.)
JEDEC
JEITA
TOSHIBA
S-MINI
Min
170
1.0
60
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
SSM3K7002F
Typ
2.0
2.1
2.2
1.4
5.8
2.4
⎯
⎯
⎯
⎯
⎯
17
26
1
2
TO-236MOD
1.5-0.15
1.Gate
2.Source
3.Drain
2.5-0.3
+0.25
2-3F1F
+0.5
SC-59
2005-11-03
Max
± 10
2.5
3.0
3.2
3.3
4.0
⎯
40
⎯
⎯
⎯
⎯
1
3
Unit: mm
Unit
mS
µA
µA
pF
pF
pF
ns
V
V
Ω
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SSM3K7002F_05 Summary of contents
Page 1
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM3K7002F High-Speed Switching Applications Analog Switch Applications • Small package • = 3.3 Ω (max) (@V Low ON-resistance : 3.2 Ω (max) (@ 3.0 Ω ...
Page 2
Switching Time Test Circuit (a) Test circuit µ Duty < < Ω) (Z out Common Source ...
Page 3
1000 Common Source 900 °C 800 7 700 10 600 500 400 300 200 100 0 0 0.5 1 1.5 Drain-Source Voltage V ( (ON ...
Page 4
I D 1000 Common source VDS = °C 100 10 10 100 Drain Current I (mA 100 Common Source VGS = MHz Ta ...
Page 5
SSM3K7002F 5 2005-11-03 ...