HN58S256AT-20 HITACHI [Hitachi Semiconductor], HN58S256AT-20 Datasheet
HN58S256AT-20
Related parts for HN58S256AT-20
HN58S256AT-20 Summary of contents
Page 1
HN58S256A Series 256 k EEPROM (32-kword 8-bit) Description The Hitachi HN58S256A is a electrically erasable and programmable EEPROM’s organized as 32768- word 8-bit employing advanced MNOS memory technology and CMOS process and circuitry technology. It also has a 64-byte page ...
Page 2
... HN58S256A Series Ordering Information Type No. Access time HN58S256AT-15 150 ns HN58S256AT-20 200 ns Pin Arrangement I/O0 18 I/ I/O3 22 I/O4 23 I/O5 24 I/ A10 Pin Description Pin name Function A0 to A14 Address input I/O0 to I/O7 Data input/output OE Output enable CE Chip enable WE Write enable ...
Page 3
Block Diagram V CC High voltage generator Address buffer and latch A6 to A14 Operation Table Operation Read Standby Write Deselect Write inhibit Data polling Notes: 1. Refer to the recommended DC ...
Page 4
HN58S256A Series Absolute Maximum Ratings Parameter Power supply voltage relative to V Input voltage relative Operationg temperature range* Storage temperature range Notes: 1. Vin min = –3.0 V for pulse width 2. Including electrical characteristics and data ...
Page 5
Capacitance ( MHz) Parameter 1 Input capacitance* 1 Output capacitance* Note: 1. This parameter is periodically sampled and not 100% tested. AC Characteristics ( + Test Conditions • Input ...
Page 6
HN58S256A Series Write Cycle Parameter Address setup time Address hold time CE to write setup time (WE controlled) CE hold time (WE controlled write setup time (CE controlled) WE hold time (CE controlled write setup time ...
Page 7
Timing Waveforms Read Timing Waveform Address CE OE High WE Data Out Byte Write Timing Waveform (1) (WE Controlled) Address Din t ACC ...
Page 8
HN58S256A Series Byte Write Timing Waveform (2) (CE Controlled) Address Din Page Write Timing Waveform (1) (WE Controlled) *5 Address A0 to A14 OES t OE ...
Page 9
Page Write Timing Waveform (2) (CE Controlled) *5 Address A0 to A14 OES Din Data Polling Timing Waveform Address OEH ...
Page 10
HN58S256A Series Toggle bit This device provide another function to determine the internal programming cycle. If the EEPROM is set to read mode during the internal programming cycle, I/O6 will charge from “1” to “0” (toggling) for each read. When ...
Page 11
Software Data Protection Timing Waveform (1) (in protection mode Address 5555 Data AA Software Data Protection Timing Waveform (2) (in non-protection mode Address 5555 2AAA Data BLC 5555 Write ...
Page 12
HN58S256A Series Functional Description Automatic Page Write Page-mode write feature allows bytes of data to be written into the EEPROM in a single write cycle. Following the initial byte cycle, an additional bytes can ...
Page 13
Data Protection 1. Data Protection against Noise on Control Pins (CE, OE, WE) during Operation During readout or standby, noise on the control pins may act as a trigger and turn the EEPROM to programming mode by mistake. To prevent ...
Page 14
HN58S256A Series 2. Data Protection at V On/Off CC When V is turned on or off, noise on the control pins generated by external circuits (CPU, etc) may act trigger and turn the EEPROM to program mode ...
Page 15
Software data protetion To prevent unintentional programming caused by noise generated by external circuits. This device has the software data protection function. In software data protection mode, 3 bytes of data must be input before write data as follows. ...
Page 16
... HN58S256A Series Package Dimensions HN58S256AT Series (TFP-28DB) 8.00 8.20 Max 28 1 0.55 0.22 0.08 0.20 0.06 0.45 Max 0.10 Dimension including the plating thickness Base material dimension 15 14 0.10 M 13.40 0.30 Hitachi Code JEDEC Code EIAJ Code Weight (reference value) Unit: mm 0.80 0 – 5 0.50 0.10 TFP-28DB — — 0.23 g ...
Page 17
When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole ...