HN58S256AT-20 HITACHI [Hitachi Semiconductor], HN58S256AT-20 Datasheet - Page 12

• Manufacturer Part Number: HN58S256AT-20
• Description: 256 k EEPROM (32-kword x 8-bit)
• Manufacturer: HITACHI [Hitachi Semiconductor]

HN58S256A Series
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 64 bytes of data to be written into the EEPROM in a single write
cycle. Following the initial byte cycle, an additional 1 to 63 bytes can be written in the same manner.
Each additional byte load cycle must be started within 30 s from the preceding falling edge of WE or
CE. When CE or WE is high for 100 s after data input, the EEPROM enters write mode automatically
and the input data are written into the EEPROM.
Data Polling
Data polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during
a write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the
EEPROM is performing a write operation.
WE, CE Pin Operation
During a write cycle, addresses are latched by the falling edge of WE or CE, and data is latched by the
rising edge of WE or CE.
Write/Erase Endurance and Data Retention Time
5
4
The endurance is 10
cycles in case of the page programming and 10
cycles in case of the byte
programming (1% cumulative failure rate). The data retention time is more than 10 years when a device is
4
page-programmed less than 10
cycles.