F25L004A-100DG ESMT [Elite Semiconductor Memory Technology Inc.], F25L004A-100DG Datasheet - Page 12

• Manufacturer Part Number: F25L004A-100DG
• Description: 4Mbit (512Kx8) 3V Only Serial Flash Memory
• Manufacturer: ESMT [Elite Semiconductor Memory Technology Inc.]

ESMT
Byte-Program
The Byte-Program instruction programs the bits in the selected
byte to the desired data. The selected byte must be in the erased
state (FFH) when initiating a Program operation. A Byte-Program
instruction applied to a protected memory area will be ignored.
Prior to any Write operation, the Write-Enable (WREN)
instruction must be executed. CE must remain active low for
the duration of the Byte-Program instruction. The Byte-Program
Elite Semiconductor Memory Technology Inc.
Figure 4 : BYTE-PROGRAM SEQUENCE
SCK
SO
CE
SI
MODE0
MODE3
MSB
0 1 2 3 4 5 6 7 8
02
HIGH IMPENANCE
MSB
ADD.
15 16
instruction is initiated by executing an 8-bit command, 02H,
followed by address bits [A
is input in order from MSB (bit 7) to LSB (bit 0). CE must be
driven high before the instruction is executed. The user may poll
the Busy bit in the software status register or wait TBP for the
completion of the internal self-timed Byte-Program operation.
See Figure 4 for the Byte-Program sequence.
ADD.
23 24
ADD.
31 32
MSB
D
IN
LSB
Publication Date: Apr. 2007
39
23
-A
Revision:
0
]. Following the address, the data
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