M36W432BG ST Microelectronics, M36W432BG Datasheet - Page 51

• Manufacturer Part Number: M36W432BG
• Description: 32 Mbit 2Mb x16 / Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM / Multiple Memory Product
• Manufacturer: ST Microelectronics

Table 30. CFI Query System Interface Information
Offset
1Bh
1Ch
1Dh
1Eh
1Fh
20h
21h
22h
23h
24h
25h
26h
00B4h
00C6h
000Ah
0027h
0036h
0004h
0004h
0000h
0005h
0005h
0003h
0000h
Data
V
V
V
V
Typical time-out per single word program = 2
Typical time-out for Double/ Quadruple Word Program = 2
Typical time-out per individual block erase = 2
Typical time-out for full chip erase = 2
Maximum time-out for word program = 2
Maximum time-out for Double/ Quadruple Word Program = 2
Maximum time-out per individual block erase = 2
Maximum time-out for chip erase = 2
DDF
DDF
PPF
PPF
[Programming] Supply Maximum Program/Erase voltage
Logic Supply Minimum Program/Erase or Write voltage
Logic Supply Maximum Program/Erase or Write voltage
[Programming] Supply Minimum Program/Erase voltage
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
bit 7 to 4
bit 3 to 0
BCD value in volts
BCD value in 100 mV
BCD value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
HEX value in volts
BCD value in 100 mV
Description
n
n
times typical
ms
n
times typical
n
n
µs
ms
n
times typical
M36W432TG, M36W432BG
n
µs
n
times typical
Value
11.4V
12.6V
512µs
512µs
16µs
16µs
2.7V
3.6V
NA
NA
1s
8s
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