TC58FVM7B2 Toshiba Semiconductor, TC58FVM7B2 Datasheet - Page 22

• Manufacturer Part Number: TC58FVM7B2
• Description: 128-MBIT (16M X 8 BITS / 8M X 16 BITS) CMOS FLASH MEMORY
• Manufacturer: Toshiba Semiconductor

DC CHARACTERISTICS
AC TEST CONDITIONS
I
I
V
V
I
I
I
I
I
I
I
I
I
I
I
I
V
(1) The device enters Automatic Sleep Mode in which the address remains fixed for during 150 ns.
(2) (I
Input Pulse Level
Input Pulse Rise and Fall Time (10%~90%)
Timing Measurement Reference Level (input)
Timing Measurement Reference Level (output)
Output Load
LI
LO
DDO1
DDO2
DDO3
DDO4
DDO5
DDO6
DDO7
DDO8
DDS1
DDS2
ID
ACC
OH
OL
LKO
SYMBOL
DDO1+
I
DDO7
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
V
Current
V
V
V
Read-While-Program Current
V
Read-while-Erase Current
V
Erase-Suspend Current
V
Current
V
Increment Read Current
V
V
(Automatic Sleep Mode
High-Voltage Input Current for
A9, OE and RESET
High-Voltage Input Current for
Low-V
WP
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
/ACC
Average Random Read
Average Program Current V
Average Erase Current
Average
Average
Average Program-while-
Average Page Read
Average Address
Standby Current
Standby Current
x 7)／8words
DD
PARAMETER
Lock-out Voltage
PARAMETER
(1)
(2)
)
0 V
0 V
I
I
I
V
t
V
V
t
V
t
V
V
t
V
t
t
or RESET
V
V
11.4 V
8.5 V
CE
OH
OH
OL
RC
RC
RC
PRC
RC
PRC
IN
IN
IN
IN
IN
IN
IN
IN
IH
IL
V
V
V
4.0 mA
V
100 ns (MIN)
V
V
V
100 ns (MIN)
V
100 ns (MIN)
V
V
V
100 ns(MIN)
V
SS
25ns(MIN)
25ns(MIN)
IN
OUT
0.1 mA
2.5 mA
IH
IH
IH
IH
IH
IH
IH
IH
DD
V
RESET
V
CONDITION
ACC
/V
/V
/V
/V
/V
/V
/V
/V
ID
IL
IL
IL
IL
IL
IL
IL
IL
V
, I
, I
, I
, I
, I
, I
, I
, I
DD
V
V
12.6 V
OUT
OUT
OUT
OUT
OUT
OUT
OUT
OUT
DD
9.5 V
SS
V
DD
0 mA
0 mA
0 mA
0 mA
0 mA
0 mA
0 mA
0 mA
C
L
(100 pF)
0.85
V
TC58FVM7(T/B)2AFT(65/80)
DD
MIN
1.5
1 TTL Gate / C
V
0.4
DD
VDD/2 , VDD/2
VDD/2 , VDD/2
CONDITION
V
DD
TYP
5 ns
35
43
43
, 0.0 V
8
8
8
1
5
2
2
L
(30 pF)
2002-10-24 22/68
MAX
0.4
2.0
55
15
15
70
70
15
11
10
10
35
20
5
1
1
1 TTL Gate
UNIT
mA
mA
V
V
A
A