T89C51CC01 Atmel, T89C51CC01 Datasheet - Page 148
T89C51CC01
Manufacturer Part Number
T89C51CC01
Description
Enhanced 8-Bit Microcontroller
Manufacturer
Atmel
Datasheet
1.T89C51CC01.pdf
(170 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Electrical Characteristics
Absolute Maximum Ratings
DC Parameters for Standard Voltage
T
Table 121. DC Parameters in Standard Voltage
148
Ambiant Temperature Under Bias:
I = industrial ....................................................... -40°C to 85°C
Storage Temperature .................................... -65°C to + 150°C
Voltage on V
Voltage on Any Pin from V
Power Dissipation .............................................................. 1 W
A
Symbol
= -40°C to +85°C; V
V
V
V
R
V
V
C
V
V
IH1
I
I
I
I
I
OL1
OH1
RST
PD
CC
TL
OH
OL
IL
LI
IH
IL
IO
(8)
T89C51CC01
Parameter
Input Low Voltage
Input High Voltage except XTAL1, RST
Input High Voltage, XTAL1, RST
Output Low Voltage, ports 1, 2, 3 and 4
Output Low Voltage, port 0, ALE, PSEN
Output High Voltage, ports 1, 2, 3, 4 and 5
Output High Voltage, port 0, ALE, PSEN
RST Pulldown Resistor
Logical 0 Input Current ports 1, 2, 3 and 4
Input Leakage Current
Logical 1 to 0 Transition Current, ports 1, 2, 3
and 4
Capacitance of I/O Buffer
Power-down Current
Power Supply Current
CC
from V
SS
SS
......................................-0.5V to + 6V
SS
= 0V; V
.................... -0.5V to V
CC
= 3V to 5.5V; F = 0 to 40 MHz
(6)
(6)
CC
+ 0.2 V
0.2 V
ICC_FLASH_WRITE
V
V
V
V
V
V
0.7 V
CC
CC
CC
CC
CC
CC
Min
-0.5
CC
15
- 0.3
- 0.7
- 1.5
- 0.3
- 0.7
- 1.5
+ 0.9
CC
I
*NOTICE:
I
CCIDLE
CCOP
= 0.7 Freq (MHz) + 3 mA
= 0.6 Freq (MHz) + 2 mA
(7)
Typ
160
40
=0.4 Freq (MHz) + 20 ma
Stresses at or above those listed under “Absolute Max-
imum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional oper-
ation of the device at these or any other conditions
above those indicated in the operational sections of
this specification is not implied. Exposure to absolute
maximum rating conditions may affect device reliability.
The power dissipation is based on the maximum allow-
able die temperature and the thermal resistance of the
package.
(5)
0.2Vcc - 0.1
V
V
CC
CC
Max
0.45
0.45
-650
200
±10
400
-50
0.3
1.0
0.3
1.0
10
+ 0.5
+ 0.5
Unit
kΩ
µA
µA
µA
µA
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
I
I
I
I
I
I
I
I
I
I
I
I
Vin = 0.45V
0.45V < Vin < V
Vin = 2.0V
Fc = 1 MHz
T
3V < V
3V < V
OL
OL
OL
OL
OL
OL
OH
OH
OH
OH
OH
OH
A
= 25°C
= 100 µA
= 1.6 mA
= 3.5 mA
= 200 µA
= 3.2 mA
= 7.0 mA
= -10 µA
= -30 µA
= -60 µA
= -200 µA
= -3.2 mA
= -7.0 mA
Test Conditions
CC
CC
< 5.5V
< 5.5V
4129K–CAN–01/05
(4)
(4)
(4)
(4)
(4)
(4)
CC
(3)
(1)(2)