ST62P08C ST Microelectronics, ST62P08C Datasheet - Page 77
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ST62P08C
Manufacturer Part Number
ST62P08C
Description
(ST62P08C - ST62P20C) 8-BIT MCU
Manufacturer
ST Microelectronics
Datasheet
1.ST62P08C.pdf
(105 pages)
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11.7 EMC CHARACTERISTICS
Susceptibility tests are performed on a sample ba-
sis during product characterization.
11.7.1 Functional EMS
(Electro Magnetic Susceptibility)
Based on a simple running application on the
product (toggling 2 LEDs through I/O ports), the
product is stressed by two electro magnetic events
until a failure occurs (indicated by the LEDs).
Notes:
1. Data based on characterization results, not tested in production.
2. The suggested 10nF and 0.1 F decoupling capacitors on the power supply lines are proposed as a good price vs. EMC
Figure 56. EMC Recommended star network power supply connection
Symbol
performance tradeoff. They have to be put as close as possible to the device power supply pins. Other EMC recom-
mendations are given in other sections (I/Os, RESET, OSCx pin characteristics).
V
V
FESD
FFTB
Voltage limits to be applied on any I/O pin
to induce a functional disturbance
Fast transient voltage burst limits to be ap-
plied through 100pF on V
to induce a functional disturbance
POWER
SUPPLY
SOURCE
Parameter
V
DD
DD
and V
ST6
DIGITAL NOISE
FILTERING
(close to the MCU)
DD
pins
V
conforms to IEC 1000-4-2
V
conforms to IEC 1000-4-4
DD
DD
10nF
A device reset allows normal operations to be re-
sumed.
5V, T
5V, T
ESD: Electro-Static Discharge (positive and
negative) is applied on all pins of the device until
a functional disturbance occurs. This test
conforms with the IEC 1000-4-2 standard.
FTB: A Burst of Fast Transient voltage (positive
and negative) is applied to V
a 100pF capacitor, until a functional disturbance
occurs. This test conforms with the IEC 1000-4-
4 standard.
ST6208C/ST6209C/ST6210C/ST6220C
0.1 F
Condition s
A
A
+25 C, f
+25 C, f
V
V
DD
SS
OSC
OSC
8MHz
8MHz
ST62XX
2)
Neg
-2.5
-2
DD
1)
and V
Pos
2
3
SS
1)
through
77/105
Unit
kV
1