HN58C65FP-25 Hitachi Semiconductor, HN58C65FP-25 Datasheet - Page 12

• Manufacturer Part Number: HN58C65FP-25
• Description: 8192-word X 8-bit Electrically Erasable and Programmable CMOS ROM
• Manufacturer: Hitachi Semiconductor

HN58C65 Series
Data Polling Timing Waveform
Functional Description
Automatic Page Write
Page-mode write feature allows 1 to 32 bytes of data to be written into the EEPROM in a single write cycle.
Following the initial byte cycle, an additional 1 to 31 bytes can be written in the same manner. Each
additional byte load cycle must be started within 30 s of the preceding rising edge of the WE. When CE or
WE is high for 100 s after data input, the EEPROM enters write mode automatically and the input data are
written into the EEPROM.
Data Polling
Data polling allows the status of the EEPROM to be determined. If EEPROM is set to read mode during a
write cycle, an inversion of the last byte of data to be loaded outputs from I/O7 to indicate that the EEPROM
is performing a write operation.
RDY/Busy Signal
RDY/Busy signal also allows the status of the EEPROM to be determined. The RDY/Busy signal has high
impedance, except in write cycle and is lowered to V
the RDY/Busy signal changes state to high impedance.
Address
CE
WE
OE
I/O7
An
Din X
t
BL
t
OE
Dout X
An
OL
12
t
WC
after the first write signal. At the end of a write cycle,
Dout X
An
t
DW
t
OES