STPS1545CFP ST Microelectronics, STPS1545CFP Datasheet - Page 2

• Manufacturer Part Number: STPS1545CFP
• Description: (STPS1545CT/CF/CG/CFP/CR) POWER SCHOTTKY RECTIFIER
• Manufacturer: ST Microelectronics

STPS1545CT/CF/CG/CFP/CR
* :
THERMAL RESISTANCES
When the diodes 1 and 2 are used simultaneously:
STATIC ELECTRICAL CHARACTERISTICS (Per diode)
Pulse test :
To evaluate the conduction losses use the following equation :
P = 0.42 x I
2/8
ABSOLUTE RATINGS (limiting values, per diode)
Symbol
Symbol
Symbol
I
R
Tj (diode 1) = P (diode1) x R
V
F(RMS)
P
dV/dt
R
I
I
I
I
F(AV)
T
dPtot
RRM
RSM
th (j-c)
V
FSM
I
RRM
ARM
th (c)
Tj
dTj
R
stg
F
*
*
F(AV)
Repetitive peak reverse voltage
RMS forward current
Average forward
current = 0.5
Surge non repetitive forward current
Repetitive peak reverse current
Non repetitive peak reverse current
Repetitive peak avalanche power
Storage temperature range
Maximum operating junction temperature *
Critical rate of rise of reverse voltage
Junction to case
* tp = 380 µs, < 2%
Reverse leakage current
Forward voltage drop
Rth j
+ 0.020 I
(
1
Parameter
a
)
thermal runaway condition for a diode on its own heatsink
F
2
(RMS)
th(j-c)
TO-220AB / D
I
ISOWATT220AB
TO-220FPAB
2
PAK
(per diode) + P (diode 2) x R
TO-220AB / D
ISOWATT220AB / TO-220FPAB
TO-220AB / D
ISOWATT220AB / TO-220FPAB
Tj = 125°C
Tj = 25°C
Tj = 125 C
Tj = 25 C
Tj = 125°C
Parameter
Parameter
Tests Conditions
2
PAK
2
2
PAK / I
PAK / I
V
I
I
I
Tc = 157°C
Tc = 130°C
tp = 10 ms
Sinusoidal
tp = 2 µs square
F = 1kHz
tp = 100 µs square
tp = 1µs Tj = 25°C
F
F
F
2
2
R
= 7.5 A
= 15 A
= 15 A
PAK
PAK
= V
th(c)
RRM
Per diode
Per device
Min.
Per diode
Total
Per diode
Total
Coupling
Typ.
0.65
0.5
5
-65 to +175
Value
10000
Value
Max.
2700
0.57
0.84
0.72
0.35
100
150
175
3.0
1.7
5.5
4.2
2.9
7.5
15
45
20
15
1
2
Unit
°C/W
mA
Unit
µA
V
V/µs
Unit
°C
W
V
A
A
A
A
A
C