STPS1545CFP ST Microelectronics, STPS1545CFP Datasheet - Page 4

• Manufacturer Part Number: STPS1545CFP
• Description: (STPS1545CT/CF/CG/CFP/CR) POWER SCHOTTKY RECTIFIER
• Manufacturer: ST Microelectronics

STPS1545CT/CF/CG/CFP/CR
Fig. 6-1: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (TO-220AB and D
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 7: Reverse leakage current versus reverse
voltage applied (typical values, per diode).
5E+4
1E+4
1E+3
1E+2
1E+1
1E+0
Fig. 9: Forward voltage drop versus forward
current (maximum values, per diode).
100.0
4/8
1E-1
10.0
1E-4
1.0
0.1
Zth(j-c)/Rth(j-c)
0.0
0
= 0.2
= 0.5
IR(µA)
= 0.1
IFM(A)
Single pulse
5
0.2
1E-3
Typical values
10
Tj=125°C
0.4
15
0.6
Tj=100°C
Tj=150°C
Tj=125°C
Tj=50°C
Tj=25°C
Tj=75°C
tp(s)
1E-2
20
VFM(V)
VR(V)
Tj=125°C
0.8
25
2
PAK).
1.0
Tj=25°C
30
1E-1
1.2
=tp/T
35
T
1.4
40
tp
1E+0
1.6
45
Fig. 6-2: Relative variation of thermal transient
impedance junction to case versus pulse duration
(per diode) (ISOWATT220AB, TO-220FPAB).
1.0
0.8
0.6
0.4
0.2
0.0
Fig. 8: Junction capacitance versus reverse
voltage applied (typical values, per diode).
1000
Fig. 10: Thermal resistance junction to ambient
versus copper surface under tab (Epoxy printed
circuit board, copper thickness: 35µm).
80
70
60
50
40
30
20
10
0
500
200
100
1E-3
0
Rth(j-a) (°C/W)
Zth(j-c)/Rth(j-c)
1
= 0.2
= 0.5
= 0.1
C(pF)
2
Single pulse
4
2
1E-2
6
8
S(Cu) (cm²)
5
tp(s)
1E-1
VR(V)
10
12
10
14
1E+0
20
=tp/T
16
T
F=1MHz
Tj=25°C
18
tp
1E+1
50
20