AM29F010-120ECB AMD [Advanced Micro Devices], AM29F010-120ECB Datasheet - Page 31
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AM29F010-120ECB
Manufacturer Part Number
AM29F010-120ECB
Description
1 Megabit (128 K x 8-bit) CMOS 5.0 Volt-only, Uniform Sector Flash Memory
Manufacturer
AMD [Advanced Micro Devices]
Datasheet
1.AM29F010-120ECB.pdf
(31 pages)
REVISION SUMMARY FOR AM29F010
Revision F+1
Product Selector Guide
There are now two V
able for the 55 ns speed option. The PDIP package is
only available in the 5% V
other packages are available in the 10% operating
range.
Ordering Information
The 45 ns speed grade is now also available in PC con-
figuration (PDIP package, commercial temperature.)
Operating Ranges
V
speed options.
AC Characteristics
Write/Erase/Program Operations: Corrected to indicate
t
not minimum values. Changed value for t
AC Characteristics
Write/Erase/Program Operations, Alternate CE# Con-
trolled Writes: Corrected to indicate t
t
Changed value for t
Trademarks
Copyright © 1998 Advanced Micro Devices, Inc. All rights reserved.
AMD, the AMD logo, and combinations thereof are registered trademarks of Advanced Micro Devices, Inc.
ExpressFlash is a trademark of Advanced Micro Devices, Inc.
Product names used in this publication are for identification purposes only and may be trademarks of their respective companies.
VLHT
WHWH2
CC
Supply Voltages: Changed to reflect the available
, t
OESP
are typical values, not minimum values.
, t
WHWH1
WHWH2
CC
, and t
supply operating ranges avail-
.
WHWH2
CC
operating range. The
are typical values,
WHWH2
WHWH1
.
and
Am29F010
Erase and Programming Performance
Combined chip and sector erase specifications;
changed typical and maximum values. Added Note 6.
Revision G
Global
Made formatting and layout consistent with other data
sheets. Used updated common tables and diagrams.
Revision G+1
Table 4, Command Definitions
Address bits A0–A14 are required for unlock cycles.
Therefore, addresses for second and fifth write cycles
are 2AAAh. Addresses for first, third, fourth, and sixth
cycles are 5555h. Read cycles are not affected. De-
leted Note 4 to reflect the correction.
Revision G+2
AC Characteristics
Erase/Program Operations; Erase and Program Oper-
ations Alternate CE# Controlled Writes: Corrected the
notes reference for t
eters are 100% tested. Corrected the note reference
for t
VCS
. This parameter is not 100% tested.
WHWH1
and t
WHWH2
. These param-
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