HY27SA081G1M HYNIX [Hynix Semiconductor], HY27SA081G1M Datasheet

HY27SA081G1M

Manufacturer Part Number

HY27SA081G1M

Description

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Manufacturer

HYNIX [Hynix Semiconductor]

Datasheet

1.HY27SA081G1M.pdf (43 pages)

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Document Title

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory

Revision History

This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for

use of circuits described. No patent licenses are implied.

Rev 0.5 / Oct. 2004

No.

0.0

0.1

0.2

0.3

0.4

0.5

1) Initial Draft

1) Add 1.8V Operation Product to Data sheet

1) Change AC Characteristics

1) Add Errata (3V Product)

2) Add Applicaiton Note

3) Modify the description of Device Operations

4) Add the description of System Interface Using /CE don’t care (Page37)

1) Delete Errata

2) Change Characteristics

3) Delete Cache Program

1) Change TSOP1, WSOP1, FBGA package dimension

2) Edit TSOP1, WSOP1 package figures

3) Change FBGA package figure

- tWP(25ns->40ns), tWC(50ns->60ns),

- tRP(30ns->40ns), tRC(50ns->60ns),

- tREADID(35ns->45ns)

Reset command must be issued when the controller writes data to

another 512Mb.(i.e. When A26 is changed during program.)

- /CE Don’t Care Enabled(Disabled) -> Sequential Row Read Disabled

Specification

Relaxed value

(Enabled) (Page22)

Before

After

60 + tr

70 + tr

tWH

tCRY

tREH

History

tREA@ID Read

1Gbit (128Mx8bit / 64Mx16bit) NAND Flash

HY27UA(08/16)1G1M Series

HY27SA(08/16)1G1M Series

May. 14. 2004

Nov. 28. 2003

Mar. 11. 2004

Jun. 01. 2004

Oct. 20. 2004

Draft Date

Apr. 29. 2004

Preliminary

Remark

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