HY27SA081G1M HYNIX [Hynix Semiconductor], HY27SA081G1M Datasheet - Page 36

• Manufacturer Part Number: HY27SA081G1M
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.5 / Oct. 2004
WE
RB
CLE
CE
ALE
RE
I/O
ALE
CLE
I/O
WE
RE
RB
Setup Command
Block Erase
60h
tWLWL
(Write Cycle time)
cycle 1
Add. N
FFh
Block Address Input
cycle 2
Add. N
Figure 30. Block Erase AC Waveform
Figure 31. Reset AC Waveform
cycle 3
Add. N
(Reset Busy time)
tBLBH4
Confirm
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
Code
D0h
(Erase Busy time)
Block Erase
tBLBH3
HY27UA(08/16)1G1M Series
HY27SA(08/16)1G1M Series
Read Status Register
70h
SR0
36