HY27UF161G2A HYNIX [Hynix Semiconductor], HY27UF161G2A Datasheet - Page 18

• Manufacturer Part Number: HY27UF161G2A
• Description: 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

Rev 0.4 / Jun. 2007
NOTE:
1. The 1st block is guaranteed to be a valid block up to 1K cycles with ECC. (1bit/528bytes)
NOTE:
1. Except for the rating “Operating Temperature Range”, stresses above those listed in the Table “Absolute
2. Minimum Voltage may undershoot to -2V during transition and for less than 20ns during transitions.
Symbol
V
T
the device at these or any other conditions above those indicated in the Operating sections of this specification is
T
Valid Block Number
Maximum Ratings” may cause permanent damage to the device. These are stress ratings only and operation of
not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability.
Vcc
IO
BIAS
T
STG
A
(2)
Parameter
Ambient Operating Temperature (Temperature Range Option 1)
Ambient Operating Temperature (Industrial Temperature Range)
Temperature Under Bias
Storage Temperature
Input or Output Voltage
Supply Voltage
Symbol
N
VB
Table 8: Absolute maximum ratings
Table 7: Valid Blocks Number
Parameter
1Gbit (128Mx8bit / 64Mx16bit) NAND Flash
1004
Min
Typ
HY27UF(08/16)1G2A Series
Max
1024
-0.6 to 4.6
-50 to 125
-65 to 150
-0.6 to 4.6
-40 to 85
0 to 70
Value
3.3V
Blocks
Unit
Unit
℃
℃
℃
℃
V
V
18