HY27US08121B HYNIX [Hynix Semiconductor], HY27US08121B Datasheet
HY27US08121B
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HY27US08121B Summary of contents
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DESCRIPTION Hynix HYMD232646B(L)8-M/K/H/L series is unbuffered 184-pin double data rate Synchronous DRAM Dual In-Line Memory Modules(DIMMs) which are organized as 32Mx64 high-speed memory arrays. Hynix HYMD232646B(L)8-M/ K/H/L series consists of eight 32Mx8 DDR SDRAM in 400mil TSOP II packages on ...
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PIN DESCRIPTION Pin Pin Description CK0,/CK0,CK1,/CK1,CK2,/CK2 Differential Clock Inputs CS0 Chip Select Input CKE0 Clock Enable Input /RAS, /CAS, /WE Commend Sets Inputs A0 ~ A12 Address BA0, BA1 Bank Address DQ0~DQ63 Data Inputs/Outputs DQS0~DQS7 Data Strobe Inputs/Outputs DM0~DM7 Data-in ...
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FUNCTIONAL BLOCK DIAGRAM /CS0 /CS0 DQS0 DQS0 DM0 DM0 DM DM DQ0 DQ0 I/O 7 I/O 7 DQ1 DQ1 I/O 6 I/O 6 DQ2 DQ2 I/O 1 I/O 1 DQ3 DQ3 I/O 0 I/O 0 DQ4 DQ4 I/O 5 I/O ...
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ABSOLUTE MAXIMUM RATINGS Parameter Ambient Temperature Storage Temperature Voltage on Any Pin relative Voltage on V relative Voltage on V relative to V DDQ SS Output Short Circuit Current Power Dissipation Soldering Temperature ...
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AC OPERATING TEST CONDITIONS Parameter Reference Voltage Termination Voltage AC Input High Level Voltage (V , min Input Low Level Voltage (V , max) IL Input Timing Measurement Reference Level Voltage Output Timing Measurement Reference Level Voltage Input ...
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CAPACITANCE o (T =25 C, f=100MHz ) A Parameter Input Capacitance Input Capacitance Input Capacitance Input Capacitance Input Capacitance Input Capacitance Data Input / Output Capacitance Note : 1. VDD = min. to max., VDDQ = 2.3V to 2.7V, VODC ...
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DC CHARACTERISTICS I Parameter Add, CMD, /CS, /CKE Input Leakage Current CK, /CK Output Leakage Current Output High Voltage Output Low Voltage Note : 3.6V, All other pins are not tested under ...
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DC CHARACTERISTICS II Parameter Symbol One bank; Active Precharge; tRC=tRC(min); tCK=tCK(min); DQ,DM and DQS inputs Operating Current IDD0 changing twice per clock cycle; address and control inputs changing once per clock cycle One bank; Active - Read Precharge; Burst Length ...
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AC CHARACTERISTICS Parameter Symbol Row Cycle Time Auto Refresh Row Cycle Time t Row Active Time t Active to Read with Auto t Precharge Delay Row Address to Column t Address Delay Row Active to Row Active Delay t Column ...
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AC CHARACTERISTICS Parameter Symbol Input Setup Time (fast slew rate) Input Hold Time (fast slew rate) Input Setup Time (slow slew rate) Input Hold Time (slow slew rate) Input Pulse Width Write DQS High Level Width t Write DQS Low ...
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CK, /CK slew rates are >=1.0V/ns 6. These parameters quarantee device timing, but they are not necessarily tested on each device, and they may be quaranteed by design or tester correlation. 7. Data latched at both rising and falling ...
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SIMPLIFIED COMMAND TRUTH TABLE Command CKEn-1 Extended Mode Register Set Mode Register Set Device Deselect No Operation Bank Active Read Read with Autoprecharge Write Write with Autoprecharge Precharge All Banks Precharge selected Bank Read Burst Stop Auto Refresh Entry Self ...
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PACKAGE DIMENSIONS (2) 0 2.5 0.098 Rev. 0.2/Dec. 02 Front 133.35 5.25 131.35 5.171 128.95 5.077 HYMD232646B(L)8-M/K/H/L 0.125MAX (Front) 31.75 1.250 1.27+/-0.10 0.050+/-.004 Side 3.18 13 ...
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SPD SPECIFICATION (32Mx64 Unbuffered DDR DIMM) Rev. 0.3/Jul. 02 SERIAL PRESENCE DETECT 14 ...
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SERIAL PRESENCE DETECT Byte# Function Description Number of Bytes written into serial memory at module 0 manufacturer 1 Total number of Bytes in SPD device 2 Fundamental memory type 3 Number of row address on this assembly 4 Number of ...
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SERIAL PRESENCE DETECT Byte # Function Description 64 Manufacturer JEDEC ID Code 65~71 --------- Manufacturer JEDEC ID Code 72 Manufacturing location 73 Manufacture part number(Hynix Memory Module) 74 -------- Manufacture part number(Hynix Memory Module) 75 -------- Manufacture part number(Hynix Memory ...