HY27US08121B HYNIX [Hynix Semiconductor], HY27US08121B Datasheet - Page 7

• Manufacturer Part Number: HY27US08121B
• Description: 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash
• Manufacturer: HYNIX [Hynix Semiconductor]

DC CHARACTERISTICS I
Note :
1. V
2. D
Rev. 0.2/Dec. 02
Input Leakage
Current
Output Leakage Current
Output High Voltage
Output Low Voltage
IN
OUT
= 0 to 3.6V, All other pins are not tested under V
is disabled, V
Parameter
OUT
Add, CMD, /CS, /CKE
CK, /CK
=0 to 2.7V
(TA=0 to 70
Symbol
V
V
I
o
I
LO
OH
C, Voltage referenced to V
LI
OL
IN
=0V
V
TT
Min.
-16
-12
+ 0.76
-5
-
HYMD232646B(L)8-M/K/H/L
SS
V
= 0V)
TT
Max
16
12
- 0.76
5
-
Unit
uA
uA
V
V
I
I
OL
OH
= +15.2mA
= -15.2mA
Note
1
2
7