JDV2S05E TOSHIBA Semiconductor CORPORATION, JDV2S05E Datasheet

JDV2S05E

Manufacturer Part Number

JDV2S05E

Description

Manufacturer

TOSHIBA Semiconductor CORPORATION

Datasheets

1.JDV2S05E.pdf (3 pages)

2.JDV2S05E.pdf (3 pages)

Specifications of JDV2S05E

Date_code

05+

Packing_info

SOd-523

Current page: 1 of 3
Download datasheet (129Kb)

VCO for UHF band

•

Absolute Maximum Ratings

Electrical Characteristics

Marking

Small Package

High Capacitance Ratio : C

Low Series Resistance : r

Reverse voltage

Junction temperature

Storage temperature range

Note: Using continuously under heavy loads (e.g. the application of high

Reverse voltage

Reverse current

Capacitance

Capacitance ratio

Series resistance

Note: Signal level when capacitance is measured. V

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e. operating

temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba

Semiconductor Reliability Handbook (“Handling

Precautions”/“Derating Concept and Methods”) and individual

reliability data (i.e. reliability test report and estimated failure rate,

etc).

Characteristics

F E

= 0.30 Ω (typ.)

TOSHIBA Diode Silicon Epitaxial Planar Type

(Ta = 25°C)

= 1.9 (typ.)

(Ta = 25°C)

Symbol

JDV2S05E

stg

Symbol

sig

−55~125

Rating

125

= 1 μA

= 100 mV

= 10 V

= 1 V, f = 1 MHz

= 4 V, f = 1 MHz

= 1 V, f = 470 MHz

Test Condition

rms

Unit

⎯

°C

Weight: 0.0014 g (typ.)

JEDEC

JEITA

TOSHIBA

3.85

1.94

Min

1.7

⎯

Typ.

4.2

2.2

1.9

0.3

⎯

1-1G1A

JDV2S05E

2007-11-01

―

4.55

2.48

Max

0.5

⎯

Unit: mm

Unit

⎯

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