RN2104 TOSHIBA Semiconductor CORPORATION, RN2104 Datasheet

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RN2104

Manufacturer Part Number
RN2104
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheets
1.RN2102.pdf (7 pages)
2.RN2102.pdf (7 pages)
3.RN2102.pdf (8 pages)

Specifications of RN2104

Date_code
05+
Packing_info
SOT-523

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RN2104
Manufacturer:
TOSHIBA
Quantity:
2 705
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RN2104
Manufacturer:
MICRON
Quantity:
1
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
RN2104
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RN2104(TE85L,F)
Manufacturer:
TI
Quantity:
2 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
RN2104(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RN2104(TE85R
Manufacturer:
SHARP
Quantity:
5 123
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
RN2104(TE85R,F)
Manufacturer:
TDK
Quantity:
622
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
RN2104F(TE85L,F)
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
RN2104FT
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
l With built-in bias resistors
l Simplify circuit design
l Reduce a quantity of parts and manufacturing process
l Complementary to RN1101~RN1106
Equivalent Circuit and Bias Resister Values
Maximum Ratings
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Characteristic
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
(Ta = 25°C)
RN2101~2106
RN2101~2104
RN2105, 2106
RN2101~2106
RN2101,RN2102,RN2103
RN2104,RN2105,RN2106
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
Symbol
V
V
V
T
P
R1 (kΩ)
CBO
CEO
EBO
I
T
stg
C
C
j
4.7
2.2
4.7
10
22
47
1
R2 (kΩ)
−55~150
Rating
4.7
10
22
47
47
47
−100
−50
−50
−10
100
150
−5
JEDEC
EIAJ
TOSHIBA
Weight: 2.4mg
Unit
mW
mA
°C
°C
V
V
V
RN2101~RN2106
2-2H1A
―
―
2001-06-07
Unit: mm

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