RN2106 TOSHIBA Semiconductor CORPORATION, RN2106 Datasheet
RN2106
Manufacturer Part Number
RN2106
Description
Manufacturer
TOSHIBA Semiconductor CORPORATION
Datasheets
1.RN2106.pdf
(8 pages)
2.RN2102.pdf
(7 pages)
3.RN2106.pdf
(8 pages)
4.RN2102.pdf
(8 pages)
Specifications of RN2106
Date_code
05+
Packing_info
SOT-523
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
RN2106
Manufacturer:
TOSHIBA
Quantity:
3 000
Part Number:
RN2106F
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Switching, Inverter Circuit, Interface Circuit
And Driver Circuit Applications
Equivalent Circuit and Bias Resistor Values
Absolute Maximum Ratings
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1101~RN1106
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Characteristic
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
RN2101~2106
RN2101~2104
RN2105, 2106
RN2101~2106
RN2101, RN2102, RN2103,
RN2104, RN2105, RN2106
Type No.
RN2101
RN2102
RN2103
RN2104
RN2105
RN2106
(Ta = 25°C)
Symbol
V
V
V
T
P
R1 (kΩ)
CBO
CEO
EBO
I
T
stg
C
C
j
4.7
2.2
4.7
10
22
47
1
R2 (kΩ)
−55~150
Rating
4.7
10
22
47
47
47
−100
−50
−50
−10
100
150
−5
JEDEC
EIAJ
TOSHIBA
Weight: 2.4 mg
Unit
mW
mA
°C
°C
V
V
V
RN2101∼RN2106
2-2H1A
―
―
2007-11-01
Unit: mm