2SB1417 PANASONIC [Panasonic Semiconductor], 2SB1417 Datasheet
2SB1417
Manufacturer Part Number
2SB1417
Description
Silicon PNP epitaxial planar type(For power amplification)
Manufacturer
PANASONIC [Panasonic Semiconductor]
Datasheet
1.2SB1417.pdf
(3 pages)
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1417
Manufacturer:
PANASONIC
Quantity:
620
Power Transistors
2SB1417, 2SB1417A
Silicon PNP epitaxial planar type
For power amplification
Complementary to 2SD2137 and 2SD2137A
*
Note: Ordering can be made by the common rank (PQ rank h
h
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Collector cutoff
current
Collector cutoff
current
Emitter cutoff current
Collector to emitter
voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
FE1
Features
High forward current transfer ratio h
Low collector to emitter saturation voltage V
Allowing automatic insertion with radial taping
Absolute Maximum Ratings
Electrical Characteristics
Rank
h
FE1
Rank classification
Parameter
Parameter
70 to 150
2SB1417
2SB1417A
2SB1417
2SB1417A
T
Ta=25 C
C
Q
=25 C
2SB1417
2SB1417A
2SB1417
2SB1417A
2SB1417
2SB1417A
120 to 250
Symbol
V
V
V
I
I
P
T
T
CP
C
P
C
j
stg
CBO
CEO
EBO
I
I
I
V
h
h
V
V
f
t
t
t
on
stg
f
CES
CEO
EBO
T
FE1
FE2
(T
Symbol
CEO
BE
CE(sat)
FE
C
*
(T
which has satisfactory linearity
=25˚C)
–55 to +150
C
=25˚C)
Ratings
–60
–80
–60
–80
150
2.0
–6
–5
–3
15
V
V
V
V
V
I
V
V
V
I
V
I
V
CE(sat)
C
C
C
CE
CE
CE
CE
EB
CE
CE
CE
CE
CC
= –30mA, I
= –3A, I
= –1A, I
= –60V, V
= –80V, V
= –30V, I
= –60V, I
= –6V, I
= –4V, I
= –4V, I
= –4V, I
= –5V, I
= –50V
FE1
= 70 to 250) in the rank classification.
B
B1
Unit
Conditions
C
C
C
C
C
˚C
˚C
= – 0.375A
W
V
V
V
A
A
= – 0.1A, I
B
B
B
= 0
= –1A
= –3A
= –3A
= – 0.2A, f = 10MHz
BE
BE
= 0
= 0
= 0
= 0
= 0
B2
= 0.1A,
0.35 0.1
C1.0
2.5 0.2
min
–60
–80
70
10
1 2 3
10.0 0.2
2.5 0.2
0.65 0.1
0.55 0.1
typ
0.3
1.0
0.2
1.05 0.1
30
1.2 0.1
MT4 Type Package
90
–100
–100
–100
–100
–100
max
–1.8
–1.2
5.0 0.1
250
1.0
0.55 0.1
1:Base
2:Collector
3:Emitter
Unit: mm
2.25 0.2
C1.0
MHz
Unit
V
V
V
A
A
A
s
s
s
1
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2SB1417 Summary of contents
Page 1
... Power Transistors 2SB1417, 2SB1417A Silicon PNP epitaxial planar type For power amplification Complementary to 2SD2137 and 2SD2137A Features High forward current transfer ratio h Low collector to emitter saturation voltage V Allowing automatic insertion with radial taping Absolute Maximum Ratings Parameter Symbol Collector to 2SB1417 V CBO ...
Page 2
... B2 V =–200V =25˚ stg 1 t 0 0.03 0.01 0 –1 –2 –3 –4 Collector current 2SB1417, 2SB1417A V — I CE(sat) C –100 –30 –10 –3 –1 T =–25˚C C – 0.3 100˚C – 0.1 25˚C – 0.03 – 0.01 – 0.1 – 0.3 –1 –3 – ...
Page 3
... Power Transistors R 10000 Note: R was measured at Ta=25˚C and under natural convection. th (1) Without heat sink (2) With a 50 1000 100 10 1 0.1 –4 –3 –2 – Time — t th(t) 50 2mm Al heat sink (1) ( 2SB1417, 2SB1417A 4 3 ...