2SB1417 PANASONIC [Panasonic Semiconductor], 2SB1417 Datasheet - Page 2

• Manufacturer Part Number: 2SB1417
• Description: Silicon PNP epitaxial planar type(For power amplification)
• Manufacturer: PANASONIC [Panasonic Semiconductor]

Power Transistors
2
1000
300
100
20
15
10
–6
–5
–4
–3
–2
–1
30
10
5
0
0
3
1
Collector to base voltage V
–1
0
0
Base to emitter voltage V
Ambient temperature Ta ( ˚C )
20
– 0.4
–3
40
25˚C
(2)
T
C
I
C
P
– 0.8
C
=100˚C
ob
60
C
— V
— V
(1) T
(2) Without heat sink
— Ta
–10
80
–25˚C
(P
(1)
–1.2
C
C
100
BE
=Ta
CB
=2.0W)
–30
120
V
–1.6
I
f=1MHz
T
CE
E
BE
C
=0
CB
140
=25˚C
=–4V
( V )
–100
–2.0
( V )
160
100000
10000
3000
1000
30000
0.03
0.01
300
100
100
0.3
0.1
–6
–5
–4
–3
–2
–1
30
10
30
10
Collector to emitter voltage V
– 0.01
0
3
1
0
0
– 0.03
Collector current I
Collector current I
T
–2
C
=100˚C
I
t
–1
B
–25˚C
on
=–100mA
– 0.1
I
, t
–4
h
C
t
stg
FE
stg
— V
t
on
t
– 0.3
, t
f
— I
–6
–2
f
25˚C
— I
CE
Pulsed t
Duty cycle=1%
I
(I
V
T
C
C
B1
C
CC
/I
=25˚C
–8
–1
B
=–I
=–200V
=5
C
C
C
–3
V
B2
–90mA
–80mA
CE
T
–50mA
w
–70mA
–60mA
)
–10
–40mA
( A )
( A )
–3
=1ms
C
–20mA
–10mA
–30mA
=–4V
=25˚C
CE
–12
–10
–4
( V )
–100
– 0.3
– 0.1
– 0.03
– 0.01
10000
3000
1000
–100
– 0.3
– 0.1
– 0.03
– 0.01
–30
–10
300
100
–30
–10
–3
–1
30
10
–3
–1
Area of safe operation (ASO)
Collector to emitter voltage V
– 0.1
– 0.01
3
1
2SB1417, 2SB1417A
–1
I
I
CP
C
T
– 0.3
– 0.03
25˚C
Collector current I
Collector current I
C
–3
10ms
=–25˚C
V
– 0.1
–10
CE(sat)
–1
f
T
100˚C
DC
— I
– 0.3
–30
–3
— I
Non repetitive pulse
T
C
C
t=1ms
=25˚C
–100
–10
–1
C
C
C
V
f=10MHz
T
CE
C
–300
–30
=25˚C
( A )
( A )
–3
I
C
=–5V
/I
CE
B
=8
–1000
–100
–10
( V )